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arXiv 2608.29766cond-mat.mes-hallquant-ph

栅极定义量子点阵列中一般约束势下的局域轨道与隧穿耦合

Localized orbitals and tunnel couplings from general confinement potentials in gate-defined quantum-dot arrays

Bohdan Khromets, William Chow, Jonathan Baugh

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中文总结 AI 辅助

本文提出一种数值局域化程序,可将一般单粒子有效轨道哈密顿量本征基旋转至量子点局域轨道壳层,直接计算隧穿耦合,在Si-MOS三量子点阵列上验证了该方法,关联了多体计算与实验测量。

中文摘要 AI 辅助

对密集的栅极定义多量子点阵列进行高效模拟,需要精确且可扩展的建模方法,该方法需适配实际电压控制约束势的非对称性与缺陷。我们提出一种数值局域化程序,该程序将一般单粒子有效轨道哈密顿量的本征基旋转至与单个量子点相关的s、p、d……壳层局域轨道波函数中。这类态之间的成对隧穿耦合直接作为哈密顿量的矩阵元计算。我们在二维三角形Si-MOS三量子点阵列上演示了该程序,得到了存在无序时隧穿耦合的电压依赖关系及其分布。我们讨论了该评估方法对多体计算的意义,并将其与实验隧穿耦合测量结果关联起来。

英文摘要

Efficient simulation of dense gate-defined multi-quantum-dot arrays requires accurate and scalable modeling methods, compatible with asymmetries and imperfections of realistic voltage-controlled confinement potentials. We present a numerical localization procedure that rotates the eigenbasis of a general one-particle effective orbital Hamiltonian into $s$-, $p$-, $d$-, $\ldots$-shells of localized orbital wavefunctions associated with individual quantum dots. The pairwise tunnel couplings between such states are computed directly as matrix elements of the Hamiltonian. We demonstrate this procedure on a 2D triangular Si-MOS triple-quantum-dot array by obtaining the voltage dependencies of the tunnel couplings and their distributions in the presence of disorder. We discuss the implications of this evaluation method on the many-body calculations, and relate it to the experimental tunnel coupling measurements.

发表机构

  • Institute for Quantum Computing and Department of Physics, University of Waterloo(滑铁卢大学量子计算研究所与物理系)
  • Institute for Quantum Computing and Department of Chemistry, University of Waterloo(滑铁卢大学量子计算研究所与化学系)

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