发表机构
Bangladesh University of Engineering and Technology; Green University of Bangladesh（孟加拉国工程与技术大学; 孟加拉国绿色大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过Cu掺杂NiOx空穴传输层优化无铅FASnI3钙钛矿太阳能电池，经数值模拟与优化后，器件峰值功率转换效率达26.06%，显著提升了无铅钙钛矿太阳能电池的性能。
AI 中文摘要
高效无铅钙钛矿太阳能电池仍受限于电荷传输效率低与严重的复合损耗。本研究采用铜（Cu）掺杂氧化镍（NiOx）作为甲脒碘化锡（FASnI3）钙钛矿太阳能电池的空穴传输层（HTL），以改善空穴提取效率并抑制载流子损耗。通过耦合数值框架对所提出器件结构的光电响应进行评估，该框架结合了时域有限差分（FDTD）光学模拟与基于有限元法（FEM）的电学建模。电学分析求解泊松方程，同时结合漂移-扩散方程与载流子连续性方程，其中考虑了辐射复合、非辐射复合及界面复合机制。对各组成层的厚度与掺杂浓度进行系统优化，以构建高性能器件结构。在优化层尺寸与载流子密度后，器件的功率转换效率（PCE）达到24.71%。集成抗反射涂层（ARC）可有效抑制反射损耗，使PCE相对提升5.47%。最终优化器件的峰值PCE达26.06%，短路电流密度（Jsc）为28.98 mA/cm²，开路电压（Voc）为1.051 V，填充因子（FF）为85.64%。这些结果表明，Cu掺杂NiOx作为极具潜力的HTL，可提升无铅FASnI3太阳能电池的电荷收集效率并最大化整体效率。
英文摘要
Efficient lead-free perovskite solar cells remain limited by inefficient charge transport and significant recombination losses. In this work, copper (Cu) doped nickel oxide (NiOx) is employed as the hole transport layer (HTL) in a formamidinium tin iodide (FASnI3) perovskite solar cell to improve hole extraction and suppress carrier losses. The optoelectronic response of the proposed device architecture is evaluated through a coupled numerical framework combining finite-difference time-domain (FDTD) optical simulations with finite element method (FEM)-based electrical modeling. Electrical analysis solves the Poisson equation together with the drift-diffusion and carrier continuity equations, while accounting for radiative, non-adiative, and interfacial recombination mechanisms. Systematic optimization of the thicknesses and doping concentrations of the constituent layers was performed to establish a high-performance device configuration. Following optimization of layer dimensions and carrier densities, the device achieved a power conversion efficiency (PCE) of 24.71%. Integrating an anti-reflection coating (ARC) effectively suppressed reflection losses, yielding a 5.47% relative enhancement in PCE. Consequently, the optimized device achieved a peak PCE of 26.06%, with a short-circuit current density (Jsc) of 28.98 mA/cm2, an open-circuit voltage (Voc) of 1.051 V, and a fill factor (FF) of 85.64%. These findings demonstrate that Cu-doped NiOx functions as a highly promising HTL to boost charge collection and maximize overall efficiency in lead-free FASnI3 solar cells.
