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自由电子气中势散射产生的分数杂质熵

Fractional Impurity Entropy from Potential Scattering in a Free Electron Gas

Syeda Neha Zaidi, Jukka I. Väyrynen

arXiv 2608.29007首次发表:更新:

发表机构

Purdue University(普渡大学)

机构由 AI 辅助整理,请以论文原文为准。

AI 中文总结

本研究针对自由电子系统,通过分析环形结构中排斥点状杂质的散射过程,发现无需强关联或拓扑序,仅靠杂质诱导的单粒子动量量子化偏移即可产生普适的分数熵变。

AI 中文摘要

熵的分数变化通常与强电子关联或拓扑系统中的非阿贝尔任意子相关。我们证明这两个条件均非必需:环形结构上的自由电子系统在排斥性点状杂质上发生散射时,随着杂质强度增加,会产生$k_B\tn\rs$的熵变。该效应源于杂质诱导的允许单粒子动量从整数量子化到半整数量子化的偏移。我们表明这种分数熵变在一大类单粒子色散关系中具有普适性,证明此类特征无需强关联或拓扑序即可出现。

英文摘要

Fractional changes in entropy are often associated with strong electron correlations or non-Abelian anyons in topological systems. We show that neither condition is necessary -- a system of free electrons on a ring scattering off a repulsive point-like impurity undergoes a $k_B\ln\sqrt 2$ entropy change as the impurity strength is increased. This effect arises from a shift of allowed single-particle momenta from integer quantization to half-integer quantization, induced by the impurity. We show that this fractional entropy change is universal across a broad class of single-particle dispersions, demonstrating that such signatures can arise without strong correlations or topological order.

Comments10 pages, 6 figures

论文原文

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