发表机构
University of Michigan; Ohio State University（密歇根大学; 俄亥俄州立大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
该研究基于CMOS氧化物构建铁电铪锆氧化物纳米机电谐振器，通过2:1内部共振失谐的两种机制产生宽带相干声子频率梳，为芯片级频率基础设施提供设计规则。
AI 中文摘要
现代电子系统需要数十种时钟和载波频率，每种频率都由专用锁相环从共享参考源合成，这带来了布线、功耗和同步负担，且负担随每个域的增加而增长。光频率梳在光子学领域解决了该问题，但电子学在其原生射频域仍缺乏等效源。本文报道了基于互补金属氧化物半导体（CMOS）氧化物构建的铁电铪锆氧化物纳米机电谐振器中的宽带声子频率梳。光刻定义的2:1内部共振失谐选择了产生机制：双音种子波混频产生了分布在两个八度以上的170余条谱线，代表性泵浦及产生谱线的相互相干性得到验证；自主Hopf路径通过环面和倍周期动力学产生了200余条谱线的分级梳，与慢流分岔理论一致。几何缩放将梳产生扩展至0.44 GHz至2.1 GHz。经修正阿伦偏差（MDEV）分析的外差测量确立了双时间尺度规律：机制决定短期稳定性，种子梳继承其泵浦的白相位噪声缩放，自主梳则获得自由运行振荡器的相位扩散，1秒MDEV从1e-11增至1e-8；材料决定长期稳定性，在空气和无主动热控制下，温度补偿堆叠抑制了未补偿谐振器中占主导的随机游走漂移。这些结果确立了机制和材料层面的设计规则，使单个谐振器可作为芯片级频率基础设施，应用于多时钟生成至射频并行处理。
英文摘要
Modern electronic systems require tens of clock and carrier frequencies, each synthesized by a dedicated phase-locked loop from a shared reference, imposing routing, power and synchronization burdens that grow with every domain. Optical frequency combs solved this problem in photonics, whereas electronics has lacked an equivalent source in its native radiofrequency domain. Here we report broadband phononic frequency combs in ferroelectric hafnia-zirconia nanoelectromechanical resonators built from complementary metal-oxide-semiconductor (CMOS) oxides. Lithographically defined detuning of a 2:1 internal resonance selects the generation mechanism: two-tone-seeded wave mixing yields more than 170 lines distributed over two octaves, with mutual coherence verified for representative pump and generated lines, whereas an autonomous Hopf route yields hierarchical combs of more than 200 lines through torus and period-doubling dynamics, in agreement with slow-flow bifurcation theory. Geometric scaling extends comb generation across 0.44 GHz to 2.1 GHz. Heterodyne measurements, analyzed using the modified Allan deviation (MDEV), establish a two-timescale law. The mechanism governs short-term stability: seeded combs inherit the white-phase-noise scaling of their pumps, whereas autonomous combs acquire the phase diffusion of a free-running oscillator, with the one-second MDEV increasing from 1e-11 to 1e-8. The material governs long-term stability: in air and without active thermal control, the temperature-compensated stack suppresses the random-walk drift that dominates uncompensated resonators. These results establish mechanism- and material-level design rules for operating a single resonator as chip-scale frequency infrastructure, from multi-clock generation to radiofrequency parallel processing.
