氧化物半导体、二维材料、碳纳米管及低温晶体管的紧凑建模与实验验证
Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification
- Synopsys（新思科技）
机构由 AI 辅助整理，请以论文原文为准。
AI总结：
本文提出统一紧凑模型，涵盖OSFET、2DFET等四类晶体管，通过电荷密度公式、输运模型等实现多场景建模，经实验验证吻合度优异，为新型晶体管建模提供统一方案。
AI中文摘要：
本文提出了一种针对新型晶体管技术的统一紧凑模型，涵盖氧化物半导体场效应晶体管（OSFET）、二维材料场效应晶体管（2DFET）、碳纳米管场效应晶体管（CNFET）及低温MOSFET。开发了统一的电荷密度公式，用于描述沟道电荷计算中的量子限域、陷阱电荷和带尾态；引入基于物理的输运模型，可无缝捕捉从长沟道扩散区到短沟道弹道极限的载流子输运；纳入缩放模型以精确描述二维静电效应；通过引入带尾态、温度依赖迁移率及阈值电压，实现对低温工作状态的建模。将所提模型与多沟道长度的制备OSFET实验数据，以及已发表的2DFET、CNFET和低温MOSFET测量结果进行验证，结果表明其在不同器件架构、工作条件和材料体系中均展现出极佳的吻合度。
英文摘要：
This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.
