二维材料与器件的可扩展、简单且通用封装
Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices
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中文总结 AI 辅助
针对空气敏感二维材料封装的难题，本文提出电子束蒸发氧化铝作为兼具封装与直接器件制造功能的方案，克服了封装与器件制造间的权衡，可兼容多种二维材料并保留其本征特性。
中文摘要 AI 辅助
对空气敏感的二维材料为器件集成带来了根本性挑战，通常需要封装来保留其本征特性，但传统保护策略对较厚的层往往失效，且会使制造过程复杂化。本文证明，电子束（e-beam）蒸发的氧化铝（$\text{AlO}_x$）既可作为有效封装层，又可作为直接器件制造的平台。与基于转移的方法不同，这种可扩展方法与较厚的薄片及完整器件或晶圆覆盖兼容，无需堆叠步骤，且能实现封装后无需蚀刻的接触。使用稀土三碲化物（$\text{RTe}_3$，R=La、Er）、半金属$\text{WTe}_2$和超导$\text{FeTe}_x\text{Se}_{1-x}$，本文表明$\text{AlO}_x$可抑制氧化并保留本征光学和电子特性。本文建立了针对不同薄片厚度的衬底依赖型封装优化，证明超薄$\text{AlO}_x$可保留$\text{WTe}_2$的等离子体激元响应，并维持$\text{FeTe}_x\text{Se}_{1-x}$的超导性能，从而克服了脆弱量子材料中封装与简单器件制造之间长期存在的权衡问题。
英文摘要
Air-sensitive 2D materials present a fundamental challenge for device integration. Encapsulation is often required to preserve intrinsic properties, yet conventional protection strategies often fail for thicker layers and complicate fabrication. Here, we demonstrate that electron-beam (e-beam) evaporated aluminum oxide ($\mathrm{AlO}_x$) serves as both an effective encapsulation layer and a platform for direct device fabrication. Unlike transfer-based approaches, this scalable method is compatible with thicker flakes and full device or wafer coverage. It requires no stacking procedures and enables contacts without post-encapsulation etching. Using rare-earth tritellurides ($\mathrm{RTe}_3$, R = La, Er), semimetallic $\mathrm{WTe}_2$, and superconducting $\mathrm{FeTe}_x\mathrm{Se}_{1-x}$, we show that $\mathrm{AlO}_x$ suppresses oxidation and preserves intrinsic optical and electronic properties. We establish substrate-dependent optimization of encapsulation across a range of flake thicknesses, demonstrate that ultrathin $\mathrm{AlO}_x$ preserves $\mathrm{WTe}_2$'s plasmonic response and maintains superconducting performance in $\mathrm{FeTe}_x\mathrm{Se}_{1-x}$. Thus we overcome the longstanding tradeoff between encapsulation and straightforward device fabrication in fragile quantum materials.
