无掩模重离子注入后4H-SiC中单光子发射器的高效制备与识别
Efficient formation and identification of single emitters in 4H-SiC following maskless heavy ion implantation
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中文总结 AI 辅助
本研究采用低能无掩模重离子铋和锡注入4H-SiC，通过900-1000℃退火获得产率达18%的孤立亮单光子发射器，提出分级表征方案实现高效识别，为室温量子技术提供可行方案。
中文摘要 AI 辅助
碳化硅（SiC）中的单光子发射器是可扩展量子技术的领先平台。近期研究重点关注与氧空位相关的发射器，这类发射器展现出极高的光学亮度和强自旋读出对比度。基于这些发射器构建可扩展量子器件的一个障碍是无掩模制备与快速识别的挑战。本研究展示了在4H-SiC中制备孤立的亮单光子发射器的方法，采用低能无掩模重离子铋（Bi）和锡（Sn）注入。退火后，多达18%的注入位点存在单个发射器，在900-1000摄氏度的退火温度下可获得最佳产率。通过模拟占据统计来估算使单发射器产率最大化的注入剂量。本研究引入了分级表征方案：先通过简单的强度阈值分离单光子发射器候选物，经光子关联测量确认后，再利用偏振、饱和计数率与磁共振频率之间的关联确定发射器类型。结果表明，区分发射器类型无需耗时的低温光谱学。综上，无掩模重离子注入与选择性筛选为制备和快速识别近表面单光子发射器提供了高效途径，适用于量子传感等室温量子技术。
英文摘要
Single photon emitters in silicon carbide (SiC) are a leading platform for scalable quantum technologies. Recent interest has focused on oxygen-vacancy-related emitters, which show exceptionally high optical brightness and strong spin readout contrast. One barrier to scalable quantum devices based on these emitters is the challenge of maskless formation and rapid identification. Here, we demonstrate the formation of isolated bright single emitters in 4H-SiC, using low-energy maskless implantation of heavy ions bismuth and tin. Following annealing, up to 18% of implanted sites host a single emitter, with optimal yields achieved at annealing temperatures of 900-1000 degrees C. Occupancy statistics are modelled to estimate the implantation dose that maximises single-emitter yield. We introduce a tiered characterisation scheme, where a simple intensity threshold isolates single-emitter candidates, confirmed through photon correlation measurements, after which correlations between polarisation, saturation count rate and magnetic resonance frequency assign emitter type. It is shown that time-consuming low-temperature spectroscopy is not necessary to distinguish emitter types. Together, maskless heavy-ion implantation and selective screening offer an efficient route to forming and rapidly identifying near-surface single emitters for room-temperature quantum technologies such as quantum sensing.
