基于22nm工艺技术的TiN动力学电感谐振器实现的快速片上温度测量
Fast On-Chip Thermometry with TiN Kinetic Inductance Resonators in 22 nm Process Technology
AI总结：
本研究基于22nm FDSOI芯片集成的TiN动力学电感谐振器，实现了亚毫开尔文灵敏度的快速片上测温，揭示了低温下热传播与弛豫的两种机制，可用于探测量子处理器的非平衡温度动态。
AI中文摘要：
理解温度的时间与空间依赖性对高性能低温器件至关重要。典型的测温技术难以同时兼顾高带宽、高灵敏度与片上集成能力，限制了其测量器件内部快速热波动的能力。本文展示了一种基于TiN动力学电感谐振器的时间分辨测温平台，该谐振器集成于22nm FDSOI芯片中。通过追踪与温度相关的谐振频率偏移，我们在低至100mK的温度下实现了亚毫开尔文级的温度灵敏度。针对距离的时间分辨片上脉冲加热实验揭示了一个起始延迟，其与准弹道热传播速度3.9±0.1mm·μs⁻¹相符。我们还发现，升高的温度会增加净热导，缩短所有空间间距下的热弛豫时间。该行为表现为两种不同机制：100mK时的衬底限制机制，此时冷却速率随加热器距离变化；以及400mK时的Kapitza边界限制机制，此时热弛豫对空间的依赖性减弱。这些测量结果证明了动力学电感测温技术能够快速探测量子处理器等低温器件中的非平衡温度动态。
英文摘要：
Understanding the temporal and spatial dependence of temperature is critical in high-performance cryogenic devices. Typical thermometry techniques struggle to simultaneously combine high bandwidth, sensitivity and on-chip integration, limiting their ability to measure fast intra-device thermal fluctuations. Here, we demonstrate a time-resolved thermometry platform based on TiN kinetic inductance resonators integrated in a 22 nm FDSOI chip. By tracking temperature-dependent shifts in the resonant frequency, we achieve sub-millikelvin temperature sensitivity down to temperatures of 100 mK. Time-resolved on-chip pulsed heating experiments as a function of distance reveal an onset delay, consistent with a quasi-ballistic heat propagation velocity of 3.9 ${\pm}$ 0.1 mm $μ$s${}^{-1}$. We also show that elevated temperatures increase net thermal conductance, shortening thermal relaxation times across all spatial separations. This behaviour manifests in two distinct regimes: a substrate-limited regime at 100 mK, where cooling rates vary with heater distance, and a Kapitza boundary-limited regime at 400 mK, where thermal relaxation becomes more spatially uniform. These measurements demonstrate kinetic inductance thermometry's ability to rapidly probe non-equilibrium temperature dynamics in cryogenic devices such as quantum processors.
