AI 中文总结
本文探讨在可重复单晶金属表面反复生长、热剥离再生长原子级薄膜的可行性，提出两项核心实验验证方向，为石墨烯及hBN的规模化制造提供工艺设计指导。
AI 中文摘要
大尺寸单晶石墨烯和六方氮化硼（hBN）的制造仍存在困难，因为批次生长与转移过程限制了面积、产量和质量。本文观点提出：是否可以在长的可重复使用单晶金属表面上，反复进行原子级薄膜的生长、热剥离与再生长？目前尚无集成工艺被验证。一旦实现快速全区域生长，热薄膜去除可能成为速率限制步骤，而可用单晶生长面积决定了每个循环的材料产量。两项实验可判断该概念是否值得进一步开发：在生长温度或接近生长温度下实现快速、无损伤的剥离，以及通过完整的生长-保温-剥离-再生长循环实现可接受的薄膜生长。随后的分析考察了结晶生长表面、层控制、界面与气体化学、产物捕获、质量标准、能耗及规模化。这些初步分析明确了已知要求，定义了早期终止标准并指导实验，但无法预见所有耦合约束或失效模式。石墨烯是定量基准，hBN则需要其自身的M(111)、产物厚度、设备及规模化策略。仅当两项核心实验成功且剩余关键环节可通过实验优化时，中试规模开发才具有合理性。
英文摘要
Large single crystals of graphene and hexagonal boron nitride (hBN) remain difficult to manufacture because batch growth and transfer limit area, throughput, and quality. This Perspective asks whether an atomically thin film could instead be grown, hot-delaminated, and regrown repeatedly on a long, reusable single-crystal metal surface. No integrated process is demonstrated. Once rapid full-area growth is available, hot film removal is likely to become the rate-limiting step, whereas usable single-crystal growth area sets the material produced per cycle. Two experiments determine whether the concept merits further development: rapid, damage-free delamination at or near the growth temperature, and acceptable film growth through repeated complete growth-dwell-peel-regrowth cycles. The analysis then examines the crystalline growth surface, layer control, interface and gas chemistries, product capture, quality criteria, energy, and scale. These provisional analyses expose known requirements, define early stop criteria, and guide experiments; they cannot anticipate every coupled constraint or failure mode. Graphene is the quantitative baseline. hBN requires its own M(111), product thickness, apparatus, and scaling strategy. Pilot-scale development is justified only if the two central experiments succeed and the remaining gates can then be refined experimentally.
Comments36 pages, 7 figures, including Supporting Information. Invited Perspective submitted to Advanced Materials
