AI 中文总结
本研究利用第四代同步辐射光源的频闪暗场X射线显微镜，实现GaN高电子迁移率晶体管开关过程的纳米尺度应变与热动力学实时观测，为相关器件设计提供关键支撑。
AI 中文摘要
数字与能源技术依赖微机电及功率电子元件，其性能受快速循环变形的严重影响，而完全集成器件需纳秒级与纳米级分辨率，导致其运行的实时信息此前无法获取。本研究通过第四代同步辐射光源的频闪暗场X射线显微镜，对工业级GaN高电子迁移率晶体管的完整开关循环进行成像，解析了整个器件的机电与热微应变场，并将其与时间相关的电压特性关联。与测量结果对比的耦合模拟重现了电场演化与瞬态热点。这种组合方法为器件物理提供了直接洞察，并为下一代能源与信息处理技术的设计策略提供参考。
英文摘要
Digital and energy technologies depend on microelectromechanical and power electronic components whose performance is critically impacted by rapid, cyclic deformations. Real-time information on their operation has remained inaccessible due to the need for nanosecond and nanometer resolution in fully integrated devices. We break this limitation by imaging the complete switching cycle of an industrial GaN high electron mobility transistor through stroboscopic dark field X ray microscopy at a fourth-generation synchrotron, resolving electromechanical and thermal micro strain fields across the entire device and correlating them with time dependent voltage characteristics. Coupled simulations benchmarked against the measurements reproduce electric field evolution and transient thermal hotspots. This combined approach provides direct insight into device physics and informs design strategies for next generation energy and information processing technologies.
Comments14 pages main manuscript, 4 figures
