基于紧凑建模的模拟丝状导电金属氧化物/HfOx阻变存储器的阻变开关动力学与记忆态平衡研究
Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM via Compact Modeling
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中文总结 AI 辅助
本研究提出基于物理的CMO/HfOx ReRAM紧凑模型，扩展离子迁移与电子隧穿的动态作用，重现多种开关特性，揭示记忆态稳定判据，支撑模拟神经形态系统与非易失性存储器的设计优化及集成电路模拟。
中文摘要 AI 辅助
阻变随机存取存储器（ReRAM）器件为下一代非易失性存储器和神经形态计算系统提供了有前景的解决方案。然而，现有的紧凑模型无法捕捉ReRAM器件的模拟阻变开关行为。本研究提出了一种先进的基于物理的模拟丝状导电金属氧化物（CMO）/HfOx ReRAM紧凑模型，该模型能够在广泛的工作条件下重现开关特性。与现有最先进的模型相比，该模型扩展了离子迁移与电子隧穿之间的动态相互作用，同时还考虑了寄生电阻元件。对各种电压输入进行了模拟，以重现准静态I-V曲线、单脉冲编程条件下的SET开关动力学，以及双极相同脉冲流作用下的模拟累积电导调制。额外的模拟揭示了基于CMO/HfOx的ReRAM记忆态在平衡点（即对称点）附近稳定的物理判据，该判据出现在存在衰减记忆机制的脉冲条件下。基于脉冲和准静态条件下这种平衡稳定的证据，建立了一种程序，用于可视化和绘制不同输入域下的平衡记忆态。该物理模型支持模拟神经形态系统和非易失性存储器架构的开关行为设计优化，还能实现基于CMO/HfOx的ReRAM技术的精确集成电路模拟。
英文摘要
Resistive Random Access Memory (ReRAM) devices offer a promising solution for next-generation non-volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices. This work presents an advanced physics-based compact model for analog filamentary Conductive-Metal-Oxide (CMO)/HfOx ReRAM, capable of reproducing switching characteristics over a broad range of operating conditions. Compared to the state-of-the-art, the model extends the dynamic interplay between ion migration and electron hopping, while also accounting for parasitic resistive elements. Simulations of various voltage inputs are tested to reproduce quasi-static I-V curves, SET switching kinetics under single-pulse programming conditions, and analog accumulative conductance modulation upon bipolar identical pulse streams. Additional simulations reveal the physical criterion underlying the stabilization of the CMO/HfOx-based ReRAM memory state around the equilibrium point, namely symmetry point, under pulsing conditions when a fading memory mechanism emerges. Building upon the evidence of such equilibrium stabilization under pulsing and quasi-static conditions, a procedure is established to visualize and map equilibrium memory states across different input domains. The physical model supports design optimization of switching behavior for analog neuromorphic systems and non-volatile memory architectures. It also enables accurate integrated circuit simulations with CMO/HfOx-based ReRAM technology.
