μ子素动力学作为4H-SiC深度分辨性质的探针
Muonium dynamics as a probe for depth-resolved properties of 4H-SiC
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中文总结 AI 辅助
本研究以LE-μSR建立n型4H-SiC的Mu电荷交换动力学基线，结合高场μSR与蒙特卡罗模拟，实现纳米级深度剖析，为优化电力电子用SiC器件制备提供支撑。
中文摘要 AI 辅助
本研究通过详细的低能μ子自旋旋转（LE-μSR）研究，建立了n型4H-SiC中μ子素（Mu）电荷交换动力学的基线。对具有氮和磷施主的外延生长及离子注入样品进行表征，以评估载流子浓度和掺杂方法对缺陷形成的影响。LE-μSR实现了近表面和注入区域的纳米级深度剖析，揭示了固定表面电荷导致的电荷载流子浓度变化。抗磁分数与相位的温度依赖性提供了Mu0向Mu-转变的直接证据，提取的活化能与已知的施主电离能一致。此外，使用高场μSR分析Mu动力学，采用蒙特卡罗模拟对Mu0电子捕获过程进行建模。模拟结果提供了从LE-μSR数据提取自由电子浓度的定量方法，增强了其表征施主活化和载流子深度分布的能力。研究表明，LE-μSR是一种强大的深度分辨工具，可为优化用于电力电子的可靠SiC器件的制备提供见解。
英文摘要
This study establishes a baseline for muonium (Mu) charge-exchange dynamics in n-type 4H-SiC through a detailed low-energy muon spin rotation (LE-uSR) investigation. Epitaxially grown and ion-implanted samples with nitrogen and phosphorus donors were characterized to assess the effect of carrier concentration and doping method on defect formation. LE-uSR enabled nanometer scale depth profiling of near-surface and implanted regions, revealing variations in charge carrier concentration due to fixed surface charges. The temperature dependence of the diamagnetic fraction and phase provided direct evidence of the Mu0 to Mu- transition, with extracted activation energies consistent with known donor ionization energies. Additionally, high-field uSR was used to analyze the Mu dynamics, and Monte-Carlo simulations to model the Mu0 electron capture process. The simulation results offer a quantitative method to extract free electron concentrations from LE-uSR data, enhancing its capability to characterize the activation of dopants and carrier depth profiles. We demonstrate that LE-uSR is a powerful depth-resolved tool that can provide insights for optimizing the fabrication of reliable SiC devices for power electronics.
