AI 中文总结
本研究通过生长 Ru$_{0.9}$V$_{0.1}$O$_2$ 单晶，发现 10% V 掺杂不会诱导 RuO$_2$ 产生交替磁性，且高浓度 V 掺杂会显著改变其态密度，为探测交替磁性跃迁提供了新途径。
AI 中文摘要
RuO$_2$ 已成为研究交替磁性（altermagnetism）的领先候选材料之一。近期量子振荡和角分辨光电子能谱测量发现，纯 RuO$_2$ 晶体中不存在交替磁性或反铁磁性。关于 RuO$_2$ 本征磁有序的持续争论，可能反映了它与交替磁性不稳定性的接近性。本研究中，我们生长了 Ru$_{0.9}$V$_{0.1}$O$_2$ 单晶，并研究其结构、输运和磁性性质。X 射线光电子能谱显示 V 的平均氧化态接近 +4。顺磁磁化率在室温下几乎保持不变，无磁有序的证据。因此，RuO$_2$ 中 10% 的 V 掺杂不会诱导交替磁性。使用两种方法对 V 掺杂体系进行的电子结构计算表明，更高浓度的 V 掺杂会导致态密度发生显著变化。这些发现强调，RuO$_2$ 中的非磁性掺杂作为探测交替磁性跃迁及其实验特征的有吸引力候选材料具有潜力。
英文摘要
RuO$_2$ has emerged as one of the leading candidates for investigating altermagnetism. Recent quantum oscillation and angle-resolved photoemission spectroscopy measurements found the absence of altermagnetism or antiferromagnetism in pure RuO$_2$ crystals. The continuing debate over intrinsic magnetic order in RuO$_2$ may reflect its proximity to an altermagnetic instability. In this work, we grow single crystals of Ru$_{0.9}$V$_{0.1}$O$_2$ and investigate their structural, transport, and magnetic properties. X-ray photoelectron spectroscopy reveals an average V oxidation state near $+4$. The paramagnetic susceptibility remains nearly unchanged up to room temperature, with no evidence of magnetic ordering. Thus, the 10\% V-substitution in RuO$_2$ does not induce altermagnetism. Electronic structure calculations for the V-substituted systems using two methods suggest that a higher level of V-substitution leads to a significant change in the density of states. These findings underscore the potential of nonmagnetic substitution in RuO$_2$ as an attractive candidate for probing altermagnetic transitions and their experimental signatures.
Comments11 pages, 7 figures, 4 tables
