130 nm SiGe BiCMOS工艺中的一款高效W-/D波段功率放大器
An Efficient W-/D-Band Power Amplifier in a 130 nm SiGe BiCMOS Process
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中文总结 AI 辅助
该研究在130 nm SiGe BiCMOS工艺中设计实现一款W-/D波段功率放大器，采用负载牵引仿真与BPF匹配策略，实现71-133 GHz带宽，增益平坦度、输出功率与效率符合要求，验证了该工艺用于宽带集成发射机前端的潜力。
中文摘要 AI 辅助
本文介绍了一款采用英飞凌科技130 nm SiGe BiCMOS工艺设计实现的宽带功率放大器（PA），用于W波段上部和D波段下部应用。研究采用完整的负载牵引仿真方法，并采用基于带通滤波器（BPF）的匹配策略设计输出级和级间匹配网络。制作的PA原型实现了71-133 GHz的小信号增益3 dB带宽；此外，在75-128 GHz范围内保持约15.7 dB的相对平坦增益，波动小于1 dB。测量的饱和输出功率为8.8-11.7 dBm，测量的峰值功率附加效率（PAE）为7.2-11.1%。这些结果证明了SiGe BiCMOS工艺在W-/D波段工作的宽带集成发射机前端中的应用潜力。
英文摘要
This paper presents a wideband power amplifier (PA) designed and implemented in Infineon Technologies' 130-nm SiGe BiCMOS process for upper W-band and lower D-band applications. A complete load-pull simulation methodology is carried out, and a band pass filter (BPF)-based matching strategy is employed for the design of the output and inter-stage matching networks. The fabricated PA prototype achieves a small-signal gain 3-dB bandwidth of 71-133 GHz. Moreover, it maintains a relatively flat gain of approximately 15.7 dB over 75-128 GHz, with less than 1-dB fluctuation. The measured saturated output power is 8.8-11.7 dBm, while the measured peak power-added efficiency (PAE) is 7.2-11.1%. These results demonstrate the potential of SiGe BiCMOS technology for wideband and integrated transmitter front ends operating across the W-/D-band frequency range.
