AI 中文总结
本研究设计了Ag3TaX4基薄膜太阳能电池，采用COMSOL Multiphysics数值分析，得出不同组分器件的性能参数，为高效下一代太阳能电池设计提供了实用指南。
AI 中文摘要
银基三元硫族化合物近年来已成为薄膜光伏领域极具潜力的吸收层材料，然而其在完整器件架构中的光伏性能尚未得到系统探索。本研究采用COMSOL Multiphysics的半导体模块，设计并数值研究了三维n-CdS/p-Ag3TaX4（X=S、Se、Te）/p+-GeS薄膜太阳能电池，依据各结构层的厚度、载流子浓度及缺陷浓度变化，分析了所提器件的各项性能参数。基于Ag3TaS4的优化器件功率转换效率（PCE）达24.66%，开路电压（VOC）为1.4V，短路电流密度（JSC）为20.68 mA/cm²，填充因子（FF）为85.16%；基于Ag3TaSe4的太阳能电池PCE为28.1%，VOC=1.19V，JSC=27.0 mA/cm²，FF=87.44%；基于Ag3TaTe4的太阳能器件PCE为27.56%，VOC为0.88V，JSC为36.14 mA/cm²，填充因子为86.65%。这些结果为深入理解器件工作机制提供了更深刻的认识，也为制备高效的Ag3TaX4（X=S、Se、Te）基新型下一代太阳能电池提供了实用的设计指南。
英文摘要
Silver-based ternary chalcogenides have recently emerged as promising absorber materials for thin film photovoltaics. Nevertheless, their photovoltaic performance in complete device architectures has not yet been systematically explored. In this work, three-dimensional (3D) n-CdS/p-Ag3TaX4 (X = S, Se, Te)/p+-GeS thin-film solar cells have been designed and numerically investigated using the Semiconductor Module of COMSOL Multiphysics. Herein, the various performance matrices of the proposed devices have been analysed in accordance with the changing of depth, carrier, and defect concentration in each layer of the structures. The optimized Ag3TaS4-based device delivers a power conversion efficiency, PCE of 24.66%, open circuit voltage, VOC of 1.4V, short circuit current density, JSC of 20.68 mA/cm2, and fill factor, FF of 85.16%. The Ag3TaSe4-based solar cell exhibits the PCE of 28.1% with VOC = 1.19V, JSC = 27.0 mA/cm2, and FF = 87.44%. The Ag3TaTe4 solar device shows a PCE of 27.56% with a VOC of 0.88 V, JSC of 36.14 mA/cm2, fill factor of 86.65%. These results provide a deeper insight into device operation and offer practical design guidelines for fabricating efficient Ag3TaX4 (X = S, Se, T e)-based novel next-generation solar cells.
Comments29 pages, 11 figures, 1 table
