二维拓扑绝缘体中的 antidot 超晶格
Antidot superlattices in two-dimensional topological insulators
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中文总结 AI 辅助
该研究通过Bernevig-Hughes-Zhang模型等方法，探究了图案化圆形孔洞阵列的二维拓扑绝缘体的电子与拓扑性质，发现孔洞靠近时其拓扑特性会消失，且图案化可兼容现有光刻技术，具备未来电子应用潜力。
中文摘要 AI 辅助
我们研究了图案化有圆形孔洞阵列的二维拓扑绝缘体的电子性质。采用Bernevig-Hughes-Zhang模型计算拓扑绝缘体超晶格的能带结构，并用有限元法进行离散化处理。利用Fukui-Hatsugai-Suzuki方法研究能带拓扑，该方法利用了能带隙闭合再打开时拓扑电荷守恒的特性。我们发现，当孔洞彼此靠近且边缘态显著重叠时，该材料会失去拓扑特性，成为平庸绝缘体。结果表明，对拓扑绝缘体进行图案化会改变其性质，且该过程可采用与当前光刻技术兼容的特征尺寸实现，这显示出将图案化拓扑绝缘体应用于未来电子学的潜力。
英文摘要
We investigate the electronic properties of a two-dimensional topological insulator patterned with an array of circular holes. The band structures of the topological insulator superlattices are calculated using the Bernevig-Hughes-Zhang model, discretized with the finite element method. The band topology is studied using the Fukui-Hatsugai-Suzuki method, exploiting the fact that topological charge is conserved when a band gap closes and reopens. We find that when the holes are close to each other and the edge states overlap significantly, the material loses its topological character and becomes a trivial insulator. The results show that patterning topological insulators changes their properties, and this can be achieved with a feature size compatible with current lithographic techniques. This shows the potential to incorporate patterned topological insulators in future electronics.
