环境应力对低增益雪崩二极管传感器响应的影响
Impact of Environmental Stress on Low Gain Avalanche Diode Sensors Response
AI总结：
本文针对LGAD传感器开展环境应力测试与模拟，评估温度、湿度等环境因素对其响应的影响，为其在高能核物理等领域的应用提供关键依据。
AI中文摘要：
低增益雪崩二极管（LGAD）是一类硅基传感器，凭借其特有的内部增益可实现优异的时间分辨率。基于LGAD技术的探测器在高能与核物理实验及其他应用中发挥着关键作用，但其性能会受温度、湿度、存储条件等环境因素影响。因此，针对LGAD传感器响应随这些环境参数变化的系统评估，对任何应用都至关重要。本文对布鲁克海文国家实验室制备的LGAD传感器进行了表征，并针对快速温变、湿度变化等多种工况开展了应力测试，同时采用专用且详细的模拟来解释实验结果。
英文摘要：
Low Gain Avalanche Diodes or LGADs are silicon sensors capable of achieving excellent timing resolution due to their characteristic internal gain. Detectors based on LGAD technology play a crucial role in High Energy and Nuclear Physics experiments, among other applications. However, their performance is affected by environmental factors such as temperature, humidity, and storage conditions. A systematic evaluation of the response of LGAD sensors as a function of these environmental parameters is therefore of essential importance for any application. LGAD sensors fabricated at the Brookhaven National Laboratory are characterized and stress-tested against various operating conditions, such as rapid temperature and humidity changes. Dedicated and detailed simulations are used to interpret the experimental results.
