用于低温应用的中子嬗变掺杂锗（NTD-Ge）的研制
Development of Neutron Transmutation Doped Germanium (NTD-Ge) for Cryogenic Applications
- University of Science and Technology of China（中国科学技术大学）
- China Institute of Atomic Energy（中国原子能科学研究院）
机构由 AI 辅助整理，请以论文原文为准。
AI总结：
本研究研制了基于NTD-Ge的低温温度计，经CARR热中子辐照、6个月冷却及标准半导体工艺制备，其电阻特性符合莫特定律，验证了该温度计在低温系统的适用性与制备工艺的可靠性。
AI中文摘要：
本文介绍了基于中子嬗变掺杂锗（NTD-Ge）的低温温度计的系统制备与表征工作。在中国先进研究堆（CARR）上，用不同注量的热中子对10N级高纯度锗样品进行辐照。辐照并经过6个月的冷却期后，采用正电子湮没寿命谱和变温霍尔效应测量，表征NTD-Ge样品中由辐照诱导产生的缺陷及载流子浓度。利用标准半导体制备技术，在处理后的样品上沉积点电极，制备出可工作的NTD-Ge低温温度计。在毫开级低温测试平台上，对器件的低温电阻性能进行了低至20 mK的表征，测得的电阻温度关系符合莫特定律，在整个测量范围内表现出极好的一致性，提取的T0参数与预期一致。这些结果共同验证了该温度计在低温系统中的适用性以及制备工艺的可靠性。
英文摘要：
This paper presents the systematic fabrication and characterization of cryogenic thermometers based on neutron transmutation-doped germanium (NTD-Ge). High-purity (10N) germanium samples were irradiated by thermal neutrons with different fluences at the China Advanced Research Reactor (CARR). After irradiation and a six-month cooling-down period, positron annihilation lifetime spectroscopy and temperature-dependent Hall effect measurements were performed to characterize irradiation-induced defects and carrier concentrations in the NTD-Ge samples. Utilizing standard semiconductor fabrication techniques, point electrodes were deposited onto the processed samples to fabricate functional NTD-Ge cryogenic thermometers. The low-temperature resistance performance of the devices was characterized down to 20 mK on a millikelvin range cryogenic test platform. The measured temperature dependence of resistance follows Mott's law, showing excellent agreement across the full measured range. The extracted T0 is consistent with expectations. These results collectively verified both the applicability of the thermometers in cryogenic system and the reliability of the fabrication procedure.
