AI 中文总结
本研究采用碘化铵作为添加剂原位生成HI，抑制NaOH-SiO2反应以解决布里奇曼法生长NaI(Tl)晶体时的粘附问题，成功制备出大尺寸无缺陷晶体，且其光输出优于商用参照晶体。
AI 中文摘要
NaI(Tl)单晶体与石英安瓿壁之间的粘附仍是密封条件下布里奇曼法生长的主要限制因素，尤其对于需要超纯辐射闪烁体的暗物质搜寻应用而言，密封处理至关重要。本研究采用碘化铵（NH4I）作为添加剂，原位生成HI，从而抑制形成粘附性硅酸钠相的NaOH-SiO2反应。首先生长直径8mm的小尺寸晶体，确定消除粘附所需的NH4I浓度，随后将优化条件应用于大尺寸NaI(Tl)晶体的生长，成功制备出直径3英寸、长度3英寸的无裂纹、无气泡NaI(Tl)晶体。该晶体的光输出为59000光子/MeV，高于本研究中用作参照的商用NaI(Tl)晶体的光输出。
英文摘要
Adhesion between NaI(Tl) single crystals and the walls of quartz ampoules remains a major limitation for Bridgman growth under sealed conditions, particularly for applications requiring ultra-radiopure scintillators for dark matter searches, where sealed handling is essential. In this study, ammonium iodide (NH4I) was used as an additive to generate HI in situ, thereby suppressing the NaOH-SiO2 reaction that forms adhesive sodium silicate phases. Small-diameter crystals (8 mm) were first grown to determine the NH4I concentration required to eliminate adhesion. The optimized condition was then applied to the growth of a large NaI(Tl) crystal. A crack-free and bubble-free NaI(Tl) crystal with dimensions of 3 inches in diameter by 3 inches in length was successfully grown. The crystal exhibited a light output of 59,000 photons/MeV, which is higher than that of the commercial NaI(Tl) crystals used as references in this study.
Comments27 pages, 14 Figures
