AI 中文总结
研究Bernevig-Hughes-Zhang型二阶拓扑绝缘体，通过非均匀自旋依赖边界耗散，使边界态局域于耗散畴壁，不改变体拓扑，数值计算验证了该结论。
AI 中文摘要
我们通过引入非均匀、自旋依赖的边界耗散，研究Bernevig-Hughes-Zhang型二阶拓扑绝缘体中耗散驱动的边界局域化。投影到边界子空间后，边界耗散的主导分量与动能项处于相同的泡利通道，该通道使两个反向传播的边界模式具有相同的实传输指数，因此它们聚集在同一耗散畴壁处。对于角态，耗散包络与Jackiw-Rebbi局域化相互竞争，增加耗散会使角态的权重从几何角转移到耗散畴壁，传播的边界态也会局域在该畴壁处。数值计算证实了边界理论的定性预测，固定能量Feshbach约化可捕捉有限尺寸效应。因此，非均匀边界耗散可在不改变体拓扑的情况下控制边界态局域化。
英文摘要
We study dissipation driven boundary localization in a Bernevig Hughes Zhang type second order topological insulator by introducing inhomogeneous, spin dependent boundary dissipation. After projection onto the edge subspace, the dominant component of the boundary dissipation lies in the same Pauli channel as the kinetic term. This channel gives both counter-propagating edge modes the same real transfer exponent. The two modes therefore accumulate at the same dissipative domain wall. For the corner states, the dissipative envelope competes with Jackiw Rebbi localization. Increasing dissipation moves their weight from the geometric corners to the dissipative domain wall. Propagating edge states also localize at this wall. Numerical calculations confirm the qualitative predictions of the edge theory. A fixed energy Feshbach reduction captures finite size effects. Inhomogeneous boundary dissipation thus controls boundary state localization without changing the bulk topology.
Comments12 pages, 5 figures
