AI 中文总结
针对CMOS在太赫兹频率下的局限性，研究人员利用28nm FD-SOI CMOS晶体管构成的CTA的等离子体特性，结合流体输运模型与Pierce理论设计并制备出700 GHz等离子体波放大器，实现太赫兹信号放大。
AI 中文摘要
本研究解决了CMOS在太赫兹（THz）频率下的局限性，在该频率下，电荷渡越时间和寄生电容限制了最高工作频率fmax。随着晶体管尺寸缩小，电流处理能力降低进一步给CMOS带来挑战，因此太赫兹领域需要新颖的电路设计方法。本研究利用CMOS晶体管中电子沟道的等离子体特性，探索太赫兹信号放大的潜在解决方案，研究了由28纳米全耗尽绝缘体上硅（FD-SOI）CMOS晶体管构成的连续体晶体管阵列（CTA）中等离子体波放大的关键机制，提出了结合流体输运模型与Pierce理论的方法，以描述等离子体波沿CTA的传播。对门控放大器的模拟显示，先进制造节点具备太赫兹信号放大的潜力。最终，设计并制备了一款工作在700 GHz的原理验证型等离子体波放大器，该放大器沿等离子体波传播路径表现出放大特性。
英文摘要
This work addresses the limitations of CMOS at terahertz (THz) frequencies, where charge transit time and parasitic capacitances restrict the maximum operating frequency, fmax. As transistor dimensions shrink, reduced current handling capabilities further challenge CMOS, necessitating novel circuit design approaches for the THz domain. By leveraging the plasma characteristics of electron channels in CMOS transistors, this study explores a potential solution for THz signal amplification. Key mechanisms in plasma wave amplification within a continuum transistor array (CTA) formed by 28 nm fully depleted silicon-on-insulator (FD-SOI) CMOS transistors are investigated. A hydrodynamic transport model combined with Pierce's theory is presented to describe plasma wave propagation along the CTA. Simulations of gated amplifiers demonstrate the potential for THz signal amplification in advanced fabrication nodes. Finally, a proof-of-concept plasma wave amplifier operating at 700 GHz has been designed and fabricated, exhibiting amplification along the plasma wave propagation path.
