AI 中文总结
该研究针对集成非线性光子器件表征的损耗与不均匀性问题，提出双向表征框架，通过经典功率测量实现多参数提取，经侧壁极化铌酸锂波导实验验证，为光子器件表征提供通用途径。
AI 中文摘要
集成非线性光子器件的精确表征常受未知端面耦合损耗和制备诱导不均匀性限制，导致本征片上性能被系统性高估或低估。本文提出并验证了一种统一的双向表征框架，该框架利用正向和反向传播下的非线性相互作用，仅通过经典功率测量即可独立提取端面特定耦合效率、本征非线性转换效率以及纵向准相位匹配轮廓。实验采用侧壁极化薄膜铌酸锂波导验证该方法，获得归一化二次谐波产生效率为(1850±20)%W⁻¹，同时演示了带宽超过10 THz的宽带非简并非线性光学参量放大和参量产生。该框架为非破坏性，仅依赖经典功率测量，无需耗时显微镜或校准内部参考，且兼容晶圆级测试，为跨材料平台光子器件的严格基准测试和高通量表征提供了通用途径。
英文摘要
Accurate characterization of integrated nonlinear photonic devices is often limited by unknown facet-coupling losses and fabrication-induced non-uniformities, leading to systematic over- or underestimation of the intrinsic on-chip performance. Here, we present and demonstrate a unified bidirectional characterization framework that exploits nonlinear interactions under forward and backward propagation to independently extract facet-specific coupling efficiencies, intrinsic nonlinear conversion efficiency, and the longitudinal quasi-phase-matching profile using only classical power measurements. We experimentally validate the method using sidewall-poled thin-film lithium niobate waveguides, obtaining a normalized second-harmonic generation efficiency of $(1850 \pm 20)~\%\mathrm{W}^{-1}$ while simultaneously demonstrating broadband non-degenerate optical parametric amplification and parametric generation spanning more than $10~\mathrm{THz}$. Our framework is non-destructive, relies solely on classical power measurements, requires neither time-intensive microscopy nor calibrated internal references, and is compatible with wafer-scale testing, providing a general route to rigorous benchmarking and high-throughput characterization of photonic devices across material platforms.
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