AI 中文总结
本研究制备了基于黑磷的室温中红外分布式反馈激光器，其激光波长可通过黑磷厚度调谐，室温阈值低，为异质集成中红外激光器提供了新平台。
AI 中文摘要
与硅光子学兼容的中红外（MIR）光源对环境传感和自由空间光通信具有重要意义。然而，传统基于GaSb的量子阱激光器和带间级联激光器依赖复杂的外延异质结构，增加了其与硅光子平台集成的难度。本研究展示了以黑磷（b-P）为有源增益介质的室温中红外表面发射分布式反馈（DFB）激光器。通过将机械剥离的b-P薄片确定性地集成到光刻图案化的SiO₂光栅上，在1064 nm光激发下获得了半高宽低于3 nm的窄带发射。激光波长可通过b-P薄片厚度在3.79至4.05 μm之间调谐，覆盖中红外技术重要区域。在纳秒激发下，室温阈值低至(0.25 ± 0.07) mJ/cm²；冷却至110 K时，阈值降低一个数量级至(0.015 ± 0.005) mJ/cm²。这些结果确立了平面b-P DFB腔作为基于范德华半导体的异质集成中红外激光器的有潜力平台。
英文摘要
Mid-infrared (MIR) light sources compatible with silicon photonics are highly desirable for environmental sensing and free-space optical communications. Conventional GaSb-based quantum-well and interband-cascade lasers, however, rely on complex epitaxial heterostructures, complicating their integration with silicon photonic platforms. Here, we demonstrate a room-temperature MIR surface-emitting distributed-feedback (DFB) laser using black phosphorus (b-P) as the active gain medium. By deterministically integrating exfoliated b-P flakes onto lithographically patterned SiO$_2$ gratings, we obtain narrowband emission with a full width at half maximum below 3 nm under 1064 nm optical excitation. The lasing wavelength is tunable from 3.79 to 4.05$~μ\text{m}$ through the b-P flake thickness, covering a technologically important region of the mid-infrared. Room-temperature thresholds as low as $(0.25 \pm 0.07)\ \text{mJ/cm}^2$ are achieved under nanosecond excitation. Upon cooling to 110 K, the threshold decreases tenfold to $(0.015 \pm 0.005)\ \text{mJ/cm}^2$. These results establish planar b-P DFB cavities as a promising platform for heterogeneously integrated MIR lasers based on van der Waals semiconductors.
Comments15 pages, 5 figures
