AI 中文总结
本研究通过结构表征和时间分辨双光子光电子能谱，发现原子级波纹度可调控单层h-BN/金属界面的像势态电子弛豫动力学，是调控超快电子动力学的有效参数。
AI 中文摘要
二维材料的原子级波纹度可改变界面电子耦合，但其对超快载流子弛豫的影响尚不明确。本研究结合结构表征与时间分辨双光子光电子能谱，对比单层h-BN/Ir(111)和h-BN/Pt(111)界面的像势态（IPS）。与文献结果一致，h-BN在Ir(111)上呈强波纹状，在Pt(111)上则相对平坦。两种衬底上的第一（n=1）和第二（n=2）IPS能量相近，但弛豫动力学差异显著：h-BN/Ir(111)中IPS衰减受响应限制（<20 fs），而h-BN/Pt(111)的寿命为n=1时56 fs、n=2时75 fs。寿命差异最合理的解释是波纹度增强了IPS波函数与金属衬底的重叠，从而加速电子衰减。这些结果表明，原子级波纹度是调控二维材料与金属界面超快电子动力学的有效物理参数。
英文摘要
Atomic-scale corrugation in two-dimensional materials can modify interfacial electronic coupling, yet its influence on ultrafast carrier relaxation remains poorly established. Here, we compare image potential states (IPS) at monolayer h-BN/Ir(111) and h-BN/Pt(111) interfaces using structural characterization and time-resolved two-photon photoemission spectroscopy. Consistent with literature, h-BN is strongly corrugated on Ir(111) but comparatively flat on Pt(111). The first (n = 1) and second (n = 2) IPS appears at similar energies on both substrates, whereas their relaxation dynamics differ markedly. On h-BN/Ir(111), the IPS decay is response-limited (<20 fs), while h-BN/Pt(111) exhibits lifetimes of 56 fs (n = 1) and 75 fs (n = 2). The lifetime contrast is most consistently explained by corrugation-enhanced overlap of the IPS wavefunction with the metal substrate, which accelerates electron decay. These results indicate that atomic-scale corrugation is an effective physical parameter for tuning ultrafast electron dynamics at two-dimensional material and metal interfaces.
