具有陡峭金属-绝缘体转变的块体有机导体中的挥发性阻变开关态
Volatile resistive-switched state in a bulk organic conductor with a sharp metal-insulator transition
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中文总结 AI 辅助
本文研究具有极陡峭一级金属-绝缘体转变的块体有机导体（d7-DMe-DCNQI）₂Cu的阻变开关态，利用电阻和¹H-NMR测量观测到温度锁定于MIT及反欧姆定律等现象，为阻变开关的非线性热效应提供基础认知，助力高效阻变开关技术发展。
中文摘要 AI 辅助
关联电子系统中的挥发性阻变开关以在施加电流下电阻骤降为特征，对开发下一代电子器件至关重要。尽管其技术意义重大，但其 underlying physics 仍不明确。衬底上的无机薄膜是阻变开关研究最广泛的平台，通常呈现宽的温度诱导金属-绝缘体转变（MIT）和显著的热耗散，这些因素使焦耳加热诱导的非线性热效应（阻变开关的关键成因）复杂化，导致其过于复杂难以解析。本文采用电阻和¹H-NMR测量研究块体有机导体（d7-DMe-DCNQI）₂Cu中的阻变开关态，该材料发生极陡峭的一级MIT且热耗散弱。这些极端条件使焦耳加热效应清晰显现，使我们观察到温度锁定于MIT以及“反欧姆定律”（电压与电流成反比）等特殊现象。这些发现为阻变开关中的非线性热效应提供了基础认知，为高效阻变开关技术提供了途径。
英文摘要
Volatile resistive switching in correlated-electron systems, characterized by an abrupt resistance decrease under applied current, is crucial for developing next-generation electronics. Despite its technological significance, the underlying physics remains elusive. Inorganic thin films on substrates---the widely studied platform for resistive switching---usually exhibit broad temperature-induced metal-insulator transitions (MITs) and substantial heat dissipation. These factors complicate the nonlinear thermal effect induced by Joule heating, a key contributor to resistive switching, rendering it excessively complex and difficult to decipher. Here we investigate a resistive-switched state in the bulk organic conductor ($d$7-DMe-DCNQI)$_{2}$Cu, which undergoes an extremely sharp first-order MIT and exhibits weak heat dissipation, using resistance and $^{1}$H-NMR measurements. These extreme conditions make the Joule heating effect vivid, allowing us to observe peculiar phenomena, including temperature locking to the MIT and `inverse Ohm's law'---an inverse proportionality between voltage and current. These findings provide fundamental insights into the nonlinear thermal effect in resistive switching, offering a pathway to efficient resistive-switching technologies.
