交替磁忆容器
Altermagnetic memcapacitors
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中文总结 AI 辅助
该研究提出基于交替磁多铁性材料RVO₃的忆容效应，其电荷流密度比优化自旋转移力矩磁隧道结高约3.6倍，可实现电荷与自旋通道同步开关，为电与自旋电子学存储提供高效非易失性平台。
中文摘要 AI 辅助
我们提出一种基于交替磁多铁性材料的自旋电子学忆容效应，确定稀土钒酸盐RVO₃作为具体实现平台，所有关键参数均与实测性质关联。在振荡电场下，产生的电荷流和自旋流呈现捏滞回线，在零场处切线闭合——这是忆容性2型忆阻器件行为的标志，其电荷流密度比优化自旋转移力矩磁隧道结报道的最低确定性开关电流密度高出约3.6倍。我们通过类Su-Schrieffer-Heeger键调制，将系统理论建模为二聚化双轨道d波交替磁晶格，遵循自旋依赖的Rice-Mele模型，从而将交替磁序与电场可切换的电荷、自旋极化耦合。相关极化回线在零场处切线闭合，产生符号变化、依赖历史的“蝶形”微分电容，确认该器件为真正的忆容器。两种响应受同一反演对称性保护，因此电荷与自旋通道同步开关，无需单独控制。这些结果确立了具体实现于RVO₃的交替磁多铁性材料，作为高效非易失性平台用于电与自旋电子学存储的结合。
英文摘要
We propose a spintronic memcapacitance effect based upon altermagnetic multiferroic materials. We identify the rare-earth vanadates RVO$_3$ as a concrete platform, with all key parameters tied to measured properties. Under an oscillating electric field, the resulting charge and spin currents trace pinched hysteresis loops that close tangentially at zero field -- the hallmark of memcapacitive, type-2 memdevice behavior -- with charge current densities exceeding, by a factor of about 3.6, the lowest deterministic switching current density reported for optimized spin-transfer-torque magnetic tunnel junctions. We model the system theoretically as a dimerized two-orbital $d$-wave altermagnetic lattice via a Su--Schrieffer--Heeger-type bond modulation, in the spirit of the spin-dependent Rice--Mele model, thereby coupling the altermagnetic order to field-switchable charge and spin polarizations. The associated polarization loops close tangentially at zero field and yield a sign-changing, history-dependent ``butterfly'' differential capacitance, identifying the device as a genuine memcapacitor. Both responses are protected by the same inversion symmetry, so charge and spin channels switch simultaneously with no separate control needed. These results establish altermagnetic multiferroics, realized concretely in RVO$_3$, as an efficient, non-volatile platform for combined electric and spintronic memory.
