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arXiv 2608.18378cond-mat.mtrl-sci

高Mn含量(MnSb₂Te₄)ₓ(Sb₂Te₃)₁₋ₓ量子材料中的磁相互作用与高居里温度的起源

Magnetic interactions and origin of high Curie temperatures in high Mn content (MnSb2Te4)x(Sb2Te3)1-x quantum materials

Candice R. Forrester, Christophe Testelin, Kaushini Wickramasinghe, David Hrabovsky, Lia Krusin-Elbaum, Maria C. Tamargo

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中文总结 AI 辅助

该研究针对高Mn含量(MnSb₂Te₄)ₓ(Sb₂Te₃)₁₋ₓ量子材料,分析其磁相互作用,证实Mn自旋S=5/2,解释了Mn²⁺离子间磁相互作用竞争导致的低磁化强度,为优化材料性能提供了思路。

中文摘要 AI 辅助

理解促进拓扑量子材料中高居里温度(T_C)的磁相互作用,对有效设计磁构型在高温下仍能保持、可实际集成到商用自旋电子器件的材料至关重要。本文提供了混合Mn₁₊ᵧSb₂₋ᵧTe₄七元层与Sb₂₋ᵧMnᵧTe₃五元层结构中观测到的高T_C起源的证据。通过晶体中Mn掺入的不同模型分析五元层/七元层结构,证实Mn自旋S=5/2,并解释了观测到的每个Mn原子低磁化强度,这是Mn²⁺离子间铁磁与反铁磁相互作用竞争的特征。本研究为更好理解和控制样品中Mn掺入以优化其性能提供了思路。

英文摘要

Understanding the magnetic interactions that promote high TC in topological quantum materials is essential to effectively design materials whose magnetic configuration persists at high temperatures and are thus practical to integrate into commercial spintronic devices. Here we provide evidence of the origin of the high TC observed in mixed Mn1+ySb2-yTe4 septuple layers and Sb2-yMnyTe3 quintuple layer structures. Analysis of the quintuple layer/septuple layer structures explored their magnetic behavior through different models of Mn-incorporation in the crystal, evidenced as Mn spin S = 5/2, and provided an explanation for the low magnetization per Mn atom observed, signature of competing ferromagnetic and antiferromagnetic interactions between Mn2+ ions. Our studies provide insight to better understand and control the Mn incorporation in our samples to optimize their properties.

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