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arXiv 2608.18295physics.optics

用于量子传感的超宽带集成光学参量放大器

Ultra-broadband integrated optical parametric amplifier for quantum sensing

Kai-Chi Chang, Tushar Sanjay Karnik, Chun-Ho Lee, Kiyoung Ko, Xinyi Ren, Ian Christen, Reshma Kopparapu, Clayton Cheung, Kiwon Kwon, Kamila Kunes, Zaijun Chen, Mengjie Yu

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中文总结 AI 辅助

本研究在薄膜铌酸锂波导中实现超宽带高增益连续波泵浦光学参量放大器,创下级联非线性过程增益新基准,为量子传感提供新方案。

中文摘要 AI 辅助

尽管薄膜铌酸锂(TFLN)可实现高效的信号产生及非线性与量子相互作用,但在集成芯片中同时实现超宽带与高增益的光学参量放大(OPA)仍是一项挑战。本研究展示了在X切掺MgO、色散工程设计且自适应极化的1.6 cm长TFLN波导中,采用连续波泵浦的OPA,实现了覆盖450 nm宽光波长窗口的平顶增益轮廓,对应3 dB增益带宽约56 THz。在已报道的TFLN平台中,该器件展现出最宽的3 dB增益带宽。同一器件可通过二阶χ(2)相互作用直接在可见光波长泵浦,或通过级联χ(2)过程在电信波段泵浦,后者无需高功率可见光泵浦激光器。在直接方案中,片上泵浦功率为74 mW时,最大增益达8.87±0.39 dB;级联方案中,片上泵浦功率为170 mW时,最大增益达10.79±0.43 dB。本研究进一步直接探测了1650-1900 nm波长范围内的OPA增益,该范围的实验增益测量此前较为匮乏。该器件的归一化片上增益为1.21 dB/(W·mm),在已报道的级联χ(2)非线性过程中创下新基准。本研究推进了集成光学参量放大器的实现,提供了高效率、稳定增益、超宽带宽及连续波操作的特性,从而为下一代量子传感和光子系统带来新能力。

英文摘要

Although thin-film lithium niobate (TFLN) facilitates efficient signal generation and nonlinear and quantum interactions, the realization of optical parametric amplification (OPA) that can provide simultaneous ultra-broadband and high-gain operation in an integrated chip continues to pose a challenge. Here we demonstrate continuous-wave-pumped OPA in an X-cut MgO-doped, dispersion-engineered, and adaptively-poled TFLN waveguide of 1.6 cm length, achieving a flat-top profile covering a 450 nm-wide optical wavelength window, corresponding to a 3-dB gain bandwidth of about 56 THz. Among reported TFLN platforms, our device exhibits the broadest 3-dB gain bandwidth. The same device can be pumped either directly at visible wavelengths through second-order x(2) interactions or in the telecom band through cascaded x(2) processes, the latter eliminating the need for a high-power visible pump laser. We achieve maximum gains of 8.87 +- 0.39 dB and 10.79 +- 0.43 dB at on-chip pump powers of 74 mW and 170 mW for the direct and cascaded schemes, respectively. We further directly probe OPA gain across the 1650-1900 nm wavelength range, where experimental gain measurements have remained scarce. With a normalized on-chip gain of 1.21 dB per W per mm, our device sets a new benchmark among reported cascaded x(2) nonlinear processes. This work advances the realization of integrated optical parametric amplifiers, offering high efficiency, robust gain, ultra-broadband bandwidth, and continuous-wave operation, thereby enabling new capabilities for next-generation quantum sensing and photonic systems.

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