用于单电子量子比特的高谐波平面彭宁陷阱
High-Harmonicity Planar Penning Traps for Single-Electron Qubits
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中文总结 AI 辅助
该研究针对量子信息处理中单电子量子比特的应用需求，通过解析处理有限电极间隙问题，优化了平面彭宁陷阱的几何结构与电极电压，以最小化非谐波性，相关结果与有限元模拟相符。
中文摘要 AI 辅助
我们详细阐述了具有高度谐波约束势的平面彭宁陷阱所需的设计选择。高谐波性对于许多应用而言不可或缺，特别是对于量子信息处理中作为量子比特的单电子约束而言。本研究扩展了此前的工作[D. Goldmann和G. Gabrielse，《物理评论A》81卷，052335（2010）]，对有限电极间隙及其在毫米级及以下小型陷阱中的相关性进行了完全解析处理，此时相对间隙尺寸不可忽略。我们推导了整体陷阱势，重点关注不同的有限间隙势模型，并展示了如何找到最优陷阱几何结构和电极电压以最小化非谐波性。将解析计算与详细的有限元模拟进行了对比。
英文摘要
We present a detailed account of the design choices required for planar Penning traps that feature a highly harmonic confining potential. High harmonicity is indispensable for a number of applications, particularly for confinement of single electrons as qubits in quantum-information processing. The present work extends previous studies [D. Goldmann and G. Gabrielse, Phys. Rev. A 81, 052335 (2010)] by a fully analytic treatment of finite electrode gaps and their relevance for small traps on the millimetre size scale and below, when relative gap sizes are non-negligible. We derive the overall trap potential with a particular focus on different models of finite-gap potentials and show how to find the optimum trap geometry and electrode voltages to minimize anharmonicities. The analytic calculations are compared with detailed finite-element simulations.
