非晶材料中的电子输运：从局域化到预测性输运建模
Electron transport in amorphous materials: from localization to predictive transport modeling
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中文总结 AI 辅助
该综述围绕非晶材料电子输运，先回顾相关基础概念与典型材料，再探讨多种计算方法，聚焦关键影响因素，最后概述预测性输运建模的进展与问题。
中文摘要 AI 辅助
非晶材料是无长程结构有序的无序固体，是研究超越晶体图像的电子输运的有用体系。本综述探讨结构无序如何改变电子波函数的空间特征，以及这些变化如何调控非晶材料（尤其是非晶半导体）中的载流子输运。首先回顾安德森局域化、迁移率边、扩散输运和跳跃输运的基本概念，随后介绍非晶硅、非晶氧化物半导体等典型非晶半导体。接着讨论计算方法，从传统玻尔兹曼和基于格林函数的输运理论，到结合分子动力学的实空间久保-格林伍德模拟。讨论聚焦于局域化、谱展宽、有限温度晶格涨落及电子-声子相互作用，最后概述非晶材料预测性输运建模的最新进展与尚存问题。
英文摘要
Amorphous materials are disordered solids without long-range structural order, making them useful systems for studying electron transport beyond the crystalline picture. This review discusses how structural disorder changes the spatial character of electron wavefunctions and how these changes govern carrier transport in amorphous materials, especially amorphous semiconductors. Basic concepts of Anderson localization, mobility edges, diffusive transport, and hopping transport are first reviewed, followed by representative amorphous semiconductors, including amorphous silicon and amorphous oxide semiconductors. Computational approaches are then discussed, from conventional Boltzmann and Green's-function-based transport theories to real-space Kubo-Greenwood simulations combined with molecular dynamics. The discussion focuses on localization, spectral broadening, finite-temperature lattice fluctuations, and electron-phonon interactions. Recent progress and remaining issues in predictive transport modeling of amorphous materials are then outlined.
