可光写入的原子蒸气存储器：光学储备池计算的基底
Optically Writable Atomic Vapor Memory as a Substrate for Optical Reservoir Computing
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中文总结 AI 辅助
本研究提出基于热铯原子蒸气的可光写入光学随机存取存储器，将其作为时间复用储备池，在XOR基准测试中达到特定性能，为光学储备池计算提供了新的物理基底。
中文摘要 AI 辅助
我们提出了一种基于热铯（Cs）原子蒸气的光学随机存取存储器（ORAM），并展示其作为储备池计算机物理基底的运行。信息通过光泵浦存储在Cs系综的超精细布居分布中，并通过差分探测吸收进行读取。通过声光偏转实现的空间复用提供了8条可寻址存储轨，每条轨最多可存储3.8比特信息。将该平台作为时间复用储备池，我们获得了核秩（KR=8.8±0.4），并在异或（XOR）基准测试中达到了0.02±0.01的最小误码率。我们发现有限的存储寿命限制了可实现的时间深度，这鼓励了对快速可寻址存储器的进一步研究。这是首次展示自由空间、可光写入的原子RAM作为光学储备池计算系统中的基底。
英文摘要
We present an optical random access memory (ORAM) based on warm cesium (Cs) atomic vapor and demonstrate its operation as the physical substrate of a reservoir computer. Information is stored in the hyperfine population distribution of a Cs ensemble via optical pumping and retrieved through differential probe absorption. Spatial multiplexing via acousto-optic deflection provides eight addressable memory rails able to store up to 3.8 bits of information per rail. Employing this platform as a temporally multiplexed reservoir, we achieve a kernel rank ($\mathrm{KR}= 8.8 \pm 0.4$), and a minimum bit error rate of $0.02 \pm 0.01$ on the Exclusive-or (XOR) benchmark. We find the limited memory lifetime constrains the achievable temporal depth, encouraging further research into fast addressable memories. This constitutes the first demonstration of a free-space, optically writable atomic RAM as a substrate in an optical reservoir computing system.
