AI 中文总结
本研究采用行列式量子蒙特卡罗方法，探究关联 kagome 系统中跳跃无序对金属-绝缘体转变的影响，揭示无序与电子关联的协同作用可诱导电子局域化，为相关实验控制提供了可行见解。
AI 中文摘要
金属-绝缘体转变通常伴随着迷人的量子现象，包括超导穹顶、反铁磁相变和量子自旋液体。与此同时，kagome 材料多为金属性，为充分发挥其在逻辑与光电器件应用中的巨大潜力，需实现绝缘态。为此，我们采用行列式量子蒙特卡罗方法，研究存在跳跃无序的关联 kagome 系统中的电子输运与磁性性质。通过对动能、直流电导率及费米能级态密度的综合分析，我们证明跳跃无序与电子关联的协同作用会促使电子局域化。在绝缘态范围内，无序水平的升高会降低 Mott 转变所需的库仑相互作用。此外，尽管无序会部分抑制反铁磁有序，但不足以引发完全的磁相变。最后，我们总结了两个示意区域，用于区分反铁磁金属、关联安德森绝缘体与无序 Mott 绝缘体。本研究加深了对 kagome 系统中由无序引发的金属-绝缘体转变的理解，为实验控制这些转变提供了可行见解。
英文摘要
The metal-insulator transition is often accompanied by fascinating quantum phenomena, including superconducting domes, antiferromagnetic phase transitions, and quantum spin liquids. Concurrently, kagome materials are predominantly metallic, necessitating the realization of insulating states to fully exploit their significant potential in logic and optoelectronic device applications. To address this, we investigate the electronic transport and magnetic properties in correlated kagome systems with hopping disorder using the determinant quantum Monte Carlo method. Through comprehensive analysis of the kinetic energy, dc conductivity, and density of states at the Fermi level, we demonstrate that the cooperative interplay between hopping disorder and electron correlations promotes electron localization. Within the insulator, an increase in the disorder level reduces the Coulomb interaction required for the Mott transition. Additionally, while disorder partially suppresses antiferromagnetic ordering, it remains insufficient to induce a complete magnetic transition. Finally, we summarize two schematic regions distinguishing between antiferromagnetic metal, correlated Anderson insulator, and disordered Mott insulator. Our study advances the understanding of metal-insulator transition in kagome systems by disorder and provides actionable insights for experimental control of these transitions.
CommentsAccepted for publication in Physical Review B
