解决与重置硅p-i-n波导中单T中心的电荷环境
Resolving and resetting the charge environment of single T-centers in silicon p-i-n waveguides
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中文总结 AI 辅助
本研究针对硅T中心电荷环境波动导致线宽展宽的问题，通过带隙以上光照重置电荷环境，将集成T中心线宽窄化至128(22) MHz，为量子互连优化提供了基础。
中文摘要 AI 辅助
硅T中心是可制造光子学平台中的电信波段自旋-光子接口。然而在纳米光子器件中，其光学线宽会因波动的电荷环境而展宽，限制了量子网络所需的光子不可区分性。本研究通过表征并抑制横向p-i-n波导中单T中心的局部电荷噪声，展示了一种前所未有的T中心光学线宽窄化方法。带隙以上光照可重置电荷环境，中和局部电场并抑制光谱扩散。在46个发射体中，该重置使中线宽窄化3.5倍至0.57(11) GHz，优化后的发射体达到128(22) MHz，为集成T中心报道的最窄未预告线宽。窄化后的跃迁支持相干光学拉比振荡，相干时间为20(2) ns。最后，利用p-i-n结进行斯塔克位移调谐，在15 mK下读出局部电场和电荷噪声宽度。结合近邻表面、体相及结场效应的分析模型与实验结果吻合良好。本研究对纳米光子集成T中心电荷环境的多方面表征，为未来面向可扩展量子互连的器件优化奠定了基础。
英文摘要
The silicon T-center is a telecom-band spin-photon interface in a manufacturable photonics platform. In nanophotonic devices, however, its optical linewidth is broadened by a fluctuating charge environment, limiting photon indistinguishability for quantum networking. Here, we address this challenge through characterization and suppression of the local charge-noise of single T-centers in lateral p-i-n waveguides, demonstrating an unheralded method of T-center optical linewidth narrowing. Above-band illumination resets the charge environment, neutralizing the local field and suppressing spectral diffusion. Across 46 emitters this reset narrows the median linewidth 3.5-fold to 0.57(11) GHz, and an optimized emitter reaches 128(22) MHz, the narrowest unheralded linewidth reported for an integrated T-center. The narrowed transition supports coherent optical Rabi oscillations with a coherence time of 20(2) ns. Finally, we perform Stark-shift tuning using the p-i-n junction, and read out the local electric field and the charge-noise width at 15 mK. An analytical model of proximal surfaces, bulk, and junction field effects provides good agreement with our findings. Our multi-pronged characterization of the nanophotonic-integrated T-center charge environment enables future device optimization toward scalable quantum interconnects.
