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arXiv 2608.15622cond-mat.mes-hall

插层WSe₂的双层石墨烯中电极可调的非局域Rashba-Edelstein效应与层选择性手性开关

Electrode-tunable nonlocal charge to spin conversion in WSe$_2$-intercalated bilayer graphene

  • Institute of Informatics, Slovak Academy of Sciences(斯洛伐克科学院信息学研究所)
  • Faculty of Physics, University of Belgrade(贝尔格莱德大学物理学院)
  • Institute of Physics, Pavol Jozef Šafárik University in Košice(科希策帕维尔·约瑟夫·沙法里克大学物理研究所)
  • Institute of Experimental Physics, Slovak Academy of Sciences(斯洛伐克科学院实验物理研究所)
  • New Technologies Research Centre, University of West Bohemia(西波希米亚大学新技术研究中心)

机构由 AI 辅助整理,请以论文原文为准。

Marko Milivojević, Juraj Mnich, Martin Gmitra

AI总结:

该研究在插层WSe₂的双层石墨烯中发现电极可调的非局域Rashba-Edelstein效应,实现层选择性手性开关,为自旋电子学应用提供了新的物理区域与器件架构。

AI中文摘要:

我们证实,将WSe₂单层插层到双层石墨烯中,会在费米能级处形成合成双层石墨烯,其中WSe₂介导的波函数重叠使两层石墨烯杂化,产生跨两层离域的态。由于层间耦合的能量与邻近诱导的自旋轨道相互作用相当,由此产生的自旋电子学行为超出了常规单界面邻近系统通常可及的范围。一种简单的四电极器件,其源电极和漏电极分别位于顶层和底层石墨烯上,可根据激活的电极进入不同的工作区域。最显著的特征是通过跨层源电极和漏电极激活的非局域Rashba-Edelstein效应:注入某一层石墨烯的电荷电流会在空间分离的另一层产生自旋积累。该效应对石墨烯与WSe₂之间的扭转角调制以及外加电场具有鲁棒性,表明垂直方向的适度结构不对称不会破坏它。此外,激活顶层或底层石墨烯上的源漏电极,会在两层中呈现符号相反的局域Rashba-Edelstein信号,从而实现层选择性手性开关。这是隐藏Rashba效应的结果,即使在净Rashba分裂被禁止时该效应依然存在。我们的结果为自旋电子学应用提供了新的物理区域和器件架构。

英文摘要:

We show that intercalating a WSe$_2$ monolayer into bilayer graphene mediates wavefunction hybridization of the two graphene layers at the Fermi level. These delocalized states entangle both graphene layers, creating a synthetic bilayer graphene with interlayer coupling comparable to the proximity-induced spin-orbit interaction. By analyzing transport properties of a four-terminal device, we demonstrate equal entangled parallel charge currents in both graphene layers, allowing us to unlock the hidden Rashba states via layer-selective chirality manifested in opposite-signed local Rashba-Edelstein signals. We also show nonlocal Rashba-Edelstein and spin Hall effects activated in one graphene layer when a charge current is driven in a spatially adjacent graphene layer. This effect is robust to the twist angle modulation between graphene and WSe$_2$, and to the applied electric field, suggesting its durability.

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