单个钒掺杂剂在单层WS2中形成深隙内态
Individual Vanadium Dopants Form Deep In-Gap States in Monolayer WS2
AI总结：
本研究通过化学气相沉积制备V-WS2，结合多种扫描探针技术确定其钒掺杂剂形成0.35 eV深隙内态，证实V-WS2是量子信息科学与工程的有前景平台。
AI中文摘要：
原子级薄材料中的点缺陷对物理性质有强烈影响，那些诱导隙内态的缺陷对量子信息科学与工程（QISE）具有重要意义。然而，由可控合成和隙内态可靠识别组成的掺杂剂工程颇具挑战性。本研究中，我们首先采用精细调控的化学气相沉积法将钒掺杂剂引入单层WS2（V-WS2），以此应对这一挑战；随后，利用一系列扫描探针显微镜技术识别并表征单个掺杂剂，这些技术包括导电原子力显微镜（cAFM）、低温扫描隧道显微镜及谱学（STM/STS），以及扫描透射电子显微镜，结果明确显示，钒掺杂剂在V-WS2中形成了位于价带顶上方0.35 eV的深隙内态。我们的实验结果得到第一性原理计算的充分支持，综合表明V-WS2是QISE应用的有前景平台。
英文摘要：
Point defects in atomically thin materials have a strong impact on physical properties and those that induce in-gap states are advantageous for quantum information science and engineering (QISE). However, dopant engineering consisting of well-controlled synthesis and robust identification of in-gap states is challenging. In this work, we addressed this challenge by first using finely tuned chemical vapor deposition to incorporate vanadium dopants into a monolayer WS2 (V-WS2). Next, we utilized a suite of scanned probe microscopy techniques to identify and characterize individual dopants. The latter included conductive atomic force microscopy (cAFM), low temperature scanning tunneling microscopy and spectroscopy (STM/STS), and scanning transmission electron microscopy and unambiguously revealed that vanadium dopants form deep in-gap states 0.35 eV above the valence band maximum in V-WS2. Our experimental results are well supported by first principles calculations and taken together demonstrate that V-WS2 is a promising platform for QISE applications.
