磁场中边缘二维电子的强光响应
Strong photoresponse of edge two-dimensional electrons in a magnetic field
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中文总结 AI 辅助
本文针对磁场中二维电子气边缘电子的光响应建立量子理论，提出实验几何，用辐射限制结构获高光电流效率，其在III-V族半导体中响应远强于石墨烯，用于灵敏辐射探测。
中文摘要 AI 辅助
在垂直磁场存在的二维电子气中的电子会以费米速度量级的高速度沿边缘传播。在微波和太赫兹辐射下，这些电子对光子的吸收为实现灵敏的辐射探测提供了途径。本文针对入射电磁波在该系统中产生的光电流建立了详细的量子理论，并提出了用于观测所预测现象的实验几何结构。通过使用适当布置的辐射限制结构，可获得高的光电流产生效率。我们还证明，在III-V族半导体结构中产生的光响应可比石墨烯中测得的高出几个数量级。
英文摘要
Electrons in two-dimensional electron gases in the presence of an out-of-plane magnetic field propagate along the edge with a high velocity of the order of the Fermi velocity. Under microwave and terahertz radiation, photon absorption by these electrons provides a pathway to realising sensitive radiation detection. Here, we develop a detailed quantum theory of the photocurrent generated in such a system by an incident electromagnetic wave and propose an experimental geometry for observing the predicted phenomenon. By using suitably arranged radiation confinement structures, a strong photocurrent generation efficiency can be obtained. We also demonstrate that the resulting photoresponse in III-V semiconductor structures can be orders of magnitude higher than that measured in graphene.
