AI 中文总结
本文针对半导体漂移-扩散方程，提出整合调和平均稳定化的离散对偶有限体积方法（DDFV-HA），该方法在低质量网格上比经典FVSG方法更可靠精确，适配复杂不规则域的半导体模拟需求。
AI 中文摘要
稳态漂移-扩散模型被广泛用于建模半导体器件中的电荷输运。经典方法如有限体积Scharfetter–Gummel（FVSG）方法在高质量Delaunay网格上表现良好，但由于依赖Voronoi图，在不规则或扭曲网格上性能不佳。为克服该网格限制，本文提出将调和平均稳定化整合到离散对偶有限体积方法（DDFV-HA）中的新方法。为验证该方案，在高质量和低质量网格上对半导体模拟比较DDFV-HA与FVSG。实验显示，DDFV-HA在高质量网格上与FVSG表现相当，在低质量网格上更可靠且精确。将DDFV-HA应用于实际晶闸管进一步证实，其非常适合难以生成高质量网格的复杂不规则域中的半导体模拟。
英文摘要
The stationary drift-diffusion model is widely used to model charge transport in semiconductor devices. Classical methods, such as the finite volume Scharfetter--Gummel (FVSG) method, perform well on high-quality Delaunay meshes but struggle on irregular or distorted meshes due to their reliance on Voronoi diagrams. To overcome this mesh limitation, this article introduces a new approach that integrates harmonic average stabilization into the discrete duality finite volume method (DDFV-HA). To validate our scheme, we compare DDFV-HA and FVSG for semiconductor simulations on both high- and low-quality meshes. Experiments show that DDFV-HA matches FVSG on high-quality meshes and is more reliable and accurate on low-quality meshes. Applying DDFV-HA to a real-world thyristor further confirms that it is well-suited for semiconductor simulations in complex, irregular domains where high-quality meshes are not easy to generate.
