锗量子点中g因子的栅极调控：基于应变的解释
Gate Control of g-factor in Germanium Quantum Dots: A Strain-Based Explanation
浏览论文内容
中文总结 AI 辅助
本文针对锗量子点在微小栅极电压下出现显著g因子变化的现象，通过结合非均匀应变有限元模拟与空穴波函数量子计算，提出基于应变诱导g张量调制的定量解释，建立了应变、静电调控与锗自旋量子比特性能的直接联系。
中文摘要 AI 辅助
g因子是决定半导体自旋量子比特行为的关键参数，它直接决定量子比特的频率及其对电噪声和磁噪声的灵敏度。近期关于锗量子点的实验表明，在微小栅极电压变化下会出现显著的g因子变化，这说明静电学与自旋性质之间存在强耦合。本文提出一种基于应变诱导g张量调制的定量解释，将非均匀应变的有限元模拟与空穴波函数的量子计算相结合，结果显示器件诱导的应变会产生空间变化的g张量；栅极电压会使量子点在该分布中移动，进而导致有效g因子发生大幅变化。本文的结果可解释实验观测到的可调性，强调了面内g张量变化的重要性，建立了锗自旋量子比特中应变、静电调控与量子比特性能之间的直接联系。
英文摘要
The g-factor is a key parameter governing the behavior of semiconductor spin qubits, as it directly determines the qubit frequency and its sensitivity to electrical and magnetic noise. Recent experiments in germanium quantum dots have revealed large g-factor variations under small gate voltage changes, indicating a strong coupling between electrostatics and spin properties. Here, we present a quantitative explanation based on strain-induced g-tensor modulation. By combining finite-element simulations of inhomogeneous strain with quantum calculations of hole wavefunctions, we show that device-induced strain produces spatially varying g-tensors. Gate voltages shift the quantum dot within this landscape, leading to substantial changes in the effective g-factor. Our results may account for the experimentally observed tunability and highlight the importance of in-plane g-tensor variations. This work establishes a direct link between strain, electrostatic control, and qubit performance in germanium spin qubits.
发表机构
- University of California, Los Angeles（加州大学洛杉矶分校）
机构由 AI 辅助整理，请以论文原文为准。
