AI 中文总结
本文基于65纳米NMOS的宽温实验数据，校准了TCAD的Lucent等模型参数，实现了多类电学曲线的良好拟合，相关校准方法可推广至其他晶体管。
AI 中文摘要
本文对65纳米n型金属-氧化物-半导体场效应晶体管（nMOSFET）进行流片，并在292K至4.5K的温度范围内完成测量。随后对技术计算机辅助设计（TCAD）模型参数进行校准，使仿真曲线与实验电学曲线相匹配。采用透射电子显微镜（TEM）确定晶体管的尺寸，以确保建模的准确性。利用校准后的参数，实验与仿真得到的电容-电压（CV）曲线、漏极电流-栅极电压（IDVG）曲线以及漏极电流-漏极电压（IDVD）曲线均实现了良好拟合。主要校准的模型为Lucent模型，该模型由扩展PhuMob模型、用于表面迁移率的Lombardi模型以及Hänsch高场迁移率模型构成。采用调整了带宽的带尾模型，以匹配所有温度下的亚阈值摆幅。由于TCAD模型不具有技术特异性，校准后的参数有望适用于其他工艺。此外，研究发现除饱和速度外，无需引入新的温度相关模型。本文详细阐述了校准流程与拟合策略，有望应用于其他类型晶体管的校准工作。
英文摘要
In this paper, 65 nm n-type Metal-Oxide-Semiconductor Field-Effect-Transistors (nMOSFETs) are taped out and measured at 292 K to 4.5 K. Technology Computer-Aided-Design (TCAD) model parameters are then calibrated to fit the simulation curves to experimental electrical curves. Transmission electron microscopy (TEM) is used to unveil the dimensions of the transistors to ensure accurate modeling. The experimental and simulation capacitance-voltage (CV) curves, drain current - gate voltage (IDVG) curves, and drain current - drain voltage (IDVD) curves are fitted well using the calibrated parameters. The major models calibrated are the Lucent model, which is comprised of an extended PhuMob model, Lombardi model for surface mobility, and the Hänsch high field mobility model. A band-tail model with adjusted band width is applied to fit the sub-threshold swings at all temperatures. The calibrated parameters are expected to be applicable to other technologies because TCAD models are not technology-specific. It is also found that, except for saturation velocity, no new temperature-dependent model is needed. The calibration process and fitting strategies are detailed and are expected to be applicable to calibrate other transistor types.
