AI 中文总结
本文研究了考虑空位间静电相互作用的忆阻器非线性模型，获得其稳态空位分布的解析解，发现其极限电阻与静电相互作用强度无关。
AI 中文摘要
本文考虑了一种基于带电移动空位的忆阻器非线性模型，同时考虑了空位之间的静电相互作用。这种相互作用会显著影响在流经忆阻器的电流作用下形成的稳态（极限）空位分布，本文针对该分布获得了解析表达式。由于静电相互作用，在空位浓度降低和升高的区域之间会形成一个中间电中性区域。有趣的是，这种忆阻器“开”态和“关”态的极限电阻至少在空位浓度的一阶主导项中，并不依赖于静电相互作用的强度。
英文摘要
A nonlinear model of a memristor based on charged mobile vacancies is considered taking into account the electrostatic interaction between them. This interaction significantly affects the stationary (limiting) vacancy distributions formed under the action of the electric current flowing through the memristor, for which analytical expressions are obtained in this work. Between the regions with reduced and increased vacancy concentrations, an intermediate electrically neutral region is formed due to the electrostatic interaction. Interestingly, the limiting resistances in the ``on'' and ``off'' states of such a memristor do not depend on the strength of the electrostatic interaction, at least in the leading first order in the vacancy concentration.
Comments5 pages, 2 figures, bilingual: English (edited machine translation), Russian (primary)
