AI 中文总结
该研究提出一种共封装光子篡改传感器，利用古斯-汉申位移检测半导体封装的层减薄与局部钻孔，其灵敏度约为传统全内反射结构的三倍，响应稳定且难以模仿，可用于半导体封装的篡改检测。
AI 中文摘要
我们提出了一种共封装的光子篡改传感器，该传感器通过反射光束的古斯-汉申（GH）位移变化来检测渐进式层减薄和局部钻孔。受抑全内反射（FTIR）将光束耦合至高折射率传感层，其横向波矢分量会获得与厚度相关的传播相位。数值模拟显示，当传感层厚度低于250 nm时，响应近似线性，且层减薄灵敏度为每去除1纳米材料对应光束位移5.3纳米，几乎是传统全内反射（TIR）结构的三倍。在代表性折射率、波长和入射角变化下，非共振响应保持稳定。局部钻孔也会产生随钻孔深度和宽度增加而单调增大的GH位移变化。这些结果确立了GH位移读出是一种快速、空间编码且难以模仿的半导体封装篡改检测方法。
英文摘要
We propose a co-packaged photonic tamper sensor that detects progressive delayering and localized drilling through changes in the Goos-Hanchen (GH) shift of a reflected optical beam. Frustrated total internal reflection (FTIR) couples the beam into a high-index sensing layer, where its transverse-wavevector components acquire a thickness-dependent propagation phase. Numerical simulations show an approximately linear response for sensing-layer thicknesses below 250 nm and a delayering sensitivity of 5.3 nm of beam displacement per nanometer of material removed, nearly three times that of a conventional total internal reflection (TIR) structure. The off-resonant response remains stable under representative refractive-index, wavelength, and incidence-angle variations. Localized drilling also produces a monotonic GH-shift change that increases with drill depth and width. These results establish GH-shift readout as a rapid, spatially encoded, and difficult-to-emulate approach for semiconductor-package tamper detection.
