AI 中文总结
本研究结合SXPS、HAXPES实验与DFT理论计算，探究不同LaInO$_3$覆盖层厚度的BaSnO$_3$/LaInO$_3$异质结构的电子结构，明确其界面带阶与2DEG态布居，为该体系高迁移率特性的调控提供依据。
AI 中文摘要
钙钛矿氧化物及其异质结构展现出丰富的功能特性，其中BaSnO$_3$/LaInO$_3$异质结构会在界面处形成高迁移率二维电子气（2DEG），近年薄膜生长技术的进步已使室温电子迁移率突破100 cm$^2$/Vs。本研究结合实验与理论，对不同LaInO$_3$覆盖层厚度的BaSnO$_3$、LaInO$_3$及BaSnO$_3$/LaInO$_3$异质结构的电子结构展开研究，将软X射线光电子能谱（SXPS）、硬X射线光电子能谱（HAXPES）测量结果与杂化密度泛函理论（DFT）计算得到的态密度（DOS）相结合，通过对芯态、半芯态及价态的分析，全面理解母体氧化物及异质结构中的化学键合与电子结构；针对BaSnO$_3$/LaInO$_3$异质结构，利用HAXPES直接探测了界面处的带阶与2DEG态的布居情况。
英文摘要
Perovskite oxides and their heterostructures exhibit a wide range of functional properties. Among these materials, BaSnO$_3$/LaInO$_3$ heterostructures form high-mobility two-dimensional electron gases (2DEGs) at their interfaces. In particular, room-temperature electron mobilities exceeding 100~cm$^2$/Vs were enabled by recent advances in thin-film growth. This work presents a combined experimental and theoretical study of the electronic structure of BaSnO$_3$, LaInO$_3$, and BaSnO$_3$/LaInO$_3$ heterostructures with varying LaInO$_3$ overlayer thicknesses. Soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) measurements are combined with densities of states (DOS) derived from hybrid density functional theory (DFT) calculations. The analysis of core, semi-core, and valence states allows to arrive at a comprehensive understanding of the chemical bonding and electronic structure in the parent oxides as well as the formed heterostructures. For the BaSnO$_3$/LaInO$_3$ heterostructure, the band offset and population of 2DEG states at the interface is directly probed using HAXPES.
