AI 中文总结
本研究通过在石墨烯-SiC界面插层双层铟，利用层分辨密度泛函理论和角分辨光电子能谱证实其可显著增强石墨烯的介电屏蔽，为调控石墨烯介电环境提供了有效方法。
AI 中文摘要
石墨烯具有极高的载流子迁移率，是下一代电子器件的理想平台。然而，在SiC上实现可规模化生长的石墨烯，其石墨烯-衬底界面的介电屏蔽能力有限，会降低电子性能。本研究通过在石墨烯-SiC界面插层双层铟（indium），系统性地增强了介电屏蔽效果。利用角分辨光电子能谱观测到的石墨烯等离子激元特征作为相互作用强度的指标，我们定量证明了两层铟的协同作用会产生强介电屏蔽。层分辨密度泛函理论显示，第一层铟作为缓冲层吸收衬底的相互作用，使第二层铟形成近自由电子系统，可有效屏蔽上方的石墨烯层。仅插层单层铟的实验显示屏蔽效果减弱，证实了第二层铟的关键作用。本研究确立了2ML铟插层是调控石墨烯介电环境的有效途径。
英文摘要
Graphene exhibits extraordinarily high carrier mobility, making it a promising platform for next-generation electronics. Scalable growth on SiC, however, suffers from limited dielectric screening at the graphene-substrate interface, degrading electronic performance. In this work, we systematically enhance dielectric screening by intercalating a bilayer of indium at the graphene-SiC interface. Using graphene's plasmaronic signature observed in angle-resolved photoemission spectroscopy as a proxy for interaction strength, we quantitatively demonstrate strong dielectric screening arising from the interplay of both indium layers. Layer-resolved density functional theory shows that the first indium layer acts as a buffer that absorbs substrate interactions, enabling the second layer to form a nearly free-electron system that efficiently screens the graphene layer above. Experiments with only a single intercalated indium layer reveal reduced screening, confirming the essential role of the second layer. Our results establish 2ML indium intercalation as a powerful route for engineering dielectric environments in graphene.
