AI 中文总结
本研究通过电场调控超导Transmon量子比特的TLS缺陷，观测到秒级长时记忆效应，揭示其源于TLS与极化电荷涨落器耦合，相关信息可用于改进量子比特稳定化及纠错协议。
AI 中文摘要
我们通过对与超导Transmon量子比特耦合的两能级系统（TLS）缺陷进行电场调控，揭示了该量子比特缺陷库中的长时记忆效应。采用快速TLS测绘方法，我们在TLS环境中观测到若干滞后效应，其记忆时间尺度达秒级，远超出单个TLS缺陷的寿命。这些观测结果可由TLS与缺陷库中电场极化的电荷涨落器耦合来解释。我们的方法可实现对该库耦合微观自由度动力学及相关记忆效应的详细测绘，此类记忆效应会引入时间关联噪声，相关信息或可用于改进量子比特稳定化及量子纠错协议。
英文摘要
We reveal long-lived memory effects in the defect bath of a superconducting transmon qubit through electric-field tuning of two-level system (TLS) defects coupled to the qubit. Using a fast TLS mapping method we observe several hysteretic effects in the TLS environment with memory timescales of the order of seconds, far beyond the lifetimes of individual TLS defects. The observations can be explained by TLS coupling to electric field-polarised charge fluctuators in the defect bath. Our method enables detailed mapping of the dynamics of the bath's coupled microscopic degrees of freedom and the associated memory effects which can introduce temporally correlated noise. This information may be used to improve qubit-stabilisation and quantum error correction protocols.
