AI 中文总结
本研究采用原子层沉积Al₂O₃钝化硅表面，最多将纳米光子器件中硅T中心的光学线宽降低57%，为产生不可区分光子提供了CMOS兼容的路径。
AI 中文摘要
硅T中心是固态平台中极具潜力的自旋-光子接口，适用于兼容电信的可扩展量子信息技术。纳米光子学中T中心面临的主要挑战是光谱扩散，即来自表面和体电荷态的局部电场环境波动会加宽光学跃迁，降低光子不可区分性。因此，直接抑制光谱扩散的策略对改进基于T中心的量子光子器件至关重要。本研究采用原子层沉积的Al₂O₃钝化硅表面，实现了T中心光学线宽的系统性窄化。在所有测量中，Al₂O₃钝化使T中心发射线宽最多降低57%。互补的带隙以上照明和光谱烧孔测量表明，剩余线宽包含由相邻电荷陷阱导致的显著光谱扩散分量，同时为均匀线宽设定了约75 MHz的上限。本研究提供了一条与CMOS兼容的路径，可用于从硅T中心产生不可区分的光子，以应用于可扩展量子光子学。
英文摘要
Silicon T centers are promising spin-photon interfaces in solid-state platforms for telecom-compatible, scalable quantum information technologies. A major challenge for T centers in nanophotonics is spectral diffusion, where fluctuations in the local electric-field environment from surface and bulk charge states broaden the optical transition and reduce photon indistinguishability. Strategies that directly suppress spectral diffusion are therefore critical for improving T-center-based quantum photonic devices. Here, we use atomic-layer-deposited Al2O3 to passivate the silicon surface and demonstrate a systematic narrowing of T center optical linewidths. Across our measurements, Al2O3 passivation reduces the T center emission linewidth by up to 57%. Complementary above-bandgap illumination and spectral hole burning measurements show that the remaining linewidth contains a significant spectral-diffusion component caused by adjacent charge traps, while placing an upper bound of approximately 75 MHz on the homogeneous linewidth. This work provides a CMOS-compatible path toward generating indistinguishable photons from silicon T centers for scalable quantum photonic applications.
