AI 中文总结
该研究利用反射几何暗场X射线显微镜，在7 μm厚的MCT/CZT外延层中空间分辨了穿透位错的弹性应变与晶格旋转，为解析其对中波红外焦平面阵列性能的影响提供了方法支撑。
AI 中文摘要
从Cd₁₋ᵧZnᵧTe（CZT）衬底延伸至液相外延Hg₁₋ₓCdₓTe（MCT）外延层的 threading dislocations（TDs，穿透位错）决定了中波红外焦平面阵列的少数载流子寿命和暗电流基底，然而在器件级密度下，其局部应变场仅能通过形貌学方法获取，该方法会混淆晶格倾斜与弹性应变。我们采用反射几何的暗场X射线显微镜对厚度为7 μm的（111）晶向MCT/CZT外延层开展研究：浅布拉格角与吸收作用使信号以层为主，物镜数值孔径则保持层与衬底的摇摆曲线卷积，因此在摇摆曲线两侧的弱束图像及其差值图像可在单帧中成像相关缺陷：点状的衬底TDs及其在层中形核的细长面内岛状特征。核平均 misorientation（取向差）将每个TD分辨为长度等于层厚7 μm的特征，同时呈现±(4至5)×10⁻⁵的轴向应变瓣。
英文摘要
Threading dislocations (TDs) propagating from a Cd$_{1-y}$Zn$_{y}$Te (CZT) substrate into a liquid-phase-epitaxy Hg$_{1-x}$Cd$_{x}$Te (MCT) epilayer set the minority-carrier lifetime and dark-current floor of mid-wave infrared focal-plane arrays, yet at device-grade densities their local strain fields have been accessible only through topography, which conflates lattice tilt and elastic strain. We apply dark-field X-ray microscopy in reflection geometry to a \SI{7}{\micro\metre}-thick (111) MCT/CZT epilayer. Shallow Bragg angle and absorption makes the signal layer dominated while the numerical aperture of the objective keeps the layer and substrate rocking curves convolved, so weak-beam images on either side of the rocking curve and their difference image the correlated defects in a single frame: dot-like substrate TDs and the elongated, in-plane island features they nucleate in the layer. Kernel average misorientation resolves each TD as a \SI{7}{\micro\metre} signature, the layer thickness, alongside axial strain lobes of $\pm(4$ to $5)\times10^{-5}$.
