AI 中文总结
该研究提出利用磁效应突破圆光电流效应对反演对称性破缺材料的限制，阐明了磁圆光电流效应的机制，分析了相关光学吸收响应，拓展了CPGE机制并为光电器件提供新机遇。
AI 中文摘要
依赖入射光旋度的光电流可在体材料及缺乏反演对称性的低维材料中产生，该效应被称为圆光电流效应（CPGE）。我们提出，利用磁效应可突破对反演对称性破缺材料的限制，使旋度依赖的光电流能在对称材料中产生，即磁圆光电流效应（MCPGE）。作为原理验证，我们通过具有可调磁化强度的磁性衬底上的单层SbH的有效哈密顿量阐明了该MCPGE的机制；此外，通过描述激子中库仑相互作用的Bethe-Salpeter方程，分析了光学吸收中的相关响应，包括单粒子和激子的响应。我们的结果拓展了CPGE的机制，为光电器件开辟了新的机遇。
英文摘要
Photocurrents that depend on the helicity of the incident light can be generated in both bulk and low-dimensional materials lacking inversion symmetry, known as the circular photogalvanic effect (CPGE). We propose that by employing a magnetic effect, the limitation on the inversion symmetry broken materials can be overcome, such that helicity-dependent photocurrent can be generated in a symmetric material, i.e., a magneto-circular photogalvanic effect (MCPGE). As a proof of principle, we elucidate the mechanism of such an MCPGE through an effective Hamiltonian of a monolayer SbH on a magnetic substrate with an adjustable magnetization. Moreover, the associated response in optical absorption is analyzed, both single-particle and excitonic, through a Bethe-Salpeter equation to describe the Coulomb interaction in excitons. Our result broadens the mechanism of CPGE and opens new opportunities for optoelectronic devices.
Comments7 pages, 4 figures
