AI 中文总结
该研究开发了基于双栅控黑磷的本征电子双稳态晶体管，利用带间隧道结等机制实现不连续开关与可编程随机性，为下一代计算架构提供了单元件集成方案。
AI 中文摘要
双稳态（即在相同偏置下存在两种稳定电子态）是开关和存储的基础，但通常不存在于晶体管中，必须通过材料手段实现：掺杂隧道结、忆阻器中的丝状体或相变。本文展示了一种具有本征电子双稳态的晶体管，其基于单一化学均匀晶体。在双栅控黑磷中，其带隙因巨斯塔克效应在垂直电场下变窄，栅极不仅可调制载流子密度，还能重塑能带轮廓，在沟道中形成带间隧道结。在双栅参数空间的输运揭示了竞争传导机制——扩散、双隧道通道与齐纳击穿，它们的相互作用产生负微分电导和跨导、不连续开关以及由栅极历史决定状态的迟滞现象。此外，开关过程仍具有本征随机性，但在窄范围栅压内统计稳定，提供了电可编程的随机源。基于该原理的器件应可在其他二维半导体中实现，为下一代计算架构开辟了路径，其中非线性、开关、存储与随机性可集成于单一电可编程元件中。
英文摘要
Bistability - two stable electronic states under the same bias - underlies switching and memory, but is usually absent in transistors and must be engineered through material means: doped tunnel junctions, filaments in memristors, or phase transitions. Here we demonstrate a transistor with intrinsic electronic bistability in a single chemically homogeneous crystal. In dual-gated black phosphorus, whose band gap narrows under a perpendicular electric field due to a giant Stark effect, the gates not only modulate carrier density but also reshape the band profile, forming interband tunnel junctions in the channel. Transport across the two-gate parameter space reveals competing conduction regimes - diffusive, two tunnelling channels and Zener breakdown - whose interplay produces negative differential conductance and transconductance, discontinuous switching, and hysteresis with the state set by gate history. Moreover, the switching remains intrinsically stochastic, yet statistically stable within a narrow range of gate voltages, providing an electrically programmable source of randomness. Devices based on this principle should be realisable in other two-dimensional semiconductors, opening a route to next-generation computing architectures in which nonlinearity, switching, memory and stochasticity are integrated within a single electrostatically programmable element.
Comments8 pages; 3 figures
