四维狄拉克模型中长程跳跃诱导的高二阶陈数
High second Chern number induced by long-range hopping in a four-dimensional Dirac model
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中文总结 AI 辅助
本研究在4D狄拉克模型中引入长程跳跃，成功诱导出高二阶陈数的拓扑相，为调控4D拓扑态及实现非常规拓扑相提供了新途径。
中文摘要 AI 辅助
四维（4D）拓扑系统为探索三维以外的拓扑现象提供了极具前景的平台。迄今为止，针对4D拓扑绝缘体的大量近期研究均聚焦于4D狄拉克模型，然而其二阶陈数被限制在有限的取值范围内。本研究表明，将长程跳跃引入4D狄拉克模型，可诱导出具有高二阶陈数的拓扑相；此外，长程跳跃还能将平庸绝缘体转化为具有非零二阶陈数的拓扑绝缘体。本研究确立了长程跳跃作为调控4D拓扑态的有效途径，为实现超出最小模型范畴的非常规拓扑相提供了新的可能。
英文摘要
Four-dimensional (4D) topological systems provide a promising platform for exploring topological phenomena beyond three dimensions. So far, extensive recent studies on 4D topological insulators have focused on the 4D Dirac model, while its second Chern number is restricted to a limited set of values. In this work, we demonstrate that introducing long-range hopping into the 4D Dirac model induces topological phases with high second Chern numbers. Furthermore, we show that the long-range hopping can transform a trivial insulator into a topological insulator with a nonzero second Chern number. Our work establishes long-range hopping as a powerful route for engineering 4D topological states and reveals new possibilities for realizing unconventional topological phases beyond minimal models.
