AI 中文总结
本文针对GaSb基波导p型层电导率高导致电隔离能力差的问题，提出深度刻蚀条形波导结合绝热锥的电光隔离策略，实现高隔离电阻与低光损耗，为2微米以上GaSb基光子集成回路提供关键组件。
AI 中文摘要
利用III-V族材料的单片光子集成回路（PIC）平台，在多段光电器件架构中集成了无源与有源波导结构。其工作要求相邻功能段间具备高电隔离度，同时不损害光信号。针对GaSb基波导（其p型层电导率高，会降低电隔离能力），本文提出一种协同设计的电光隔离策略：采用深度刻蚀条形波导，结合GaSb基多量子阱异质结构中的绝热脊形-条形波导锥。仅深度刻蚀可实现最高40千欧的隔离电阻，但会严重劣化光传输性能。通过引入优化的绝热锥，本文在集成吸收体的两段器件中实现了良好的光学性能，即单模连续波激射，同时维持17.3千欧的隔离电阻；这比此前报道的GaSb基两段器件提升了约17倍。该方法为开发工作在2微米以上的单片GaSb基PIC奠定了关键基础。
英文摘要
Monolithic photonic integrated circuits (PICs) platforms exploiting III-V materials combine passive and active waveguide structures in multi-section optoelectronic device architectures. Their operation requires high electrical isolation between adjacent functional sections without compromising the optical signal. This fundamental requirement is addressed for GaSb-based waveguides, which are known to exhibit high conductivity of p-type layers reducing the electrical isolation capability. To this end, a co-designed electrical-optical isolation strategy based on using deeply etched strip waveguides combined with adiabatic ridge-to-strip waveguide tapers in GaSb-based multiple-quantum-well heterostructures is proposed. While deep etching alone enables isolation resistances of up to 40 k-ohm, it severely degrades optical propagation. By introducing optimized adiabatic tapers, we demonstrate good optical performance as single-mode continuous-wave lasing in a two-section device with integrated absorber, while maintaining an isolation resistance of 17.3 k-ohm; this corresponds to an approximately 17-fold improvement over previously reported GaSb two-section devices. The approach establishes a critical building block for the development of monolithic GaSb-based PICs operating above 2 um.
Journal refMd Ajwaad Zaman Quashef, Nouman Zia, Jukka Viheriälä, Mircea Guina; Low optical loss electrical isolation for multi-section monolithic GaSb-based photonic circuits. Appl. Phys. Lett. 3 August 2026; 129 (5): 053304
